Magnetfeldabhaengiger Widerstand

1,264,817. Magneto-resistive devices. SIEMENS A.G. 17 July, 1969 [19 July, 1968], No. 36171/69. Heading H1K. A semi-conductor body 1 forming the resistive element of a magneto-resistor is bonded by a layer 2 of electrically insulating material to a ferromagnetic body 3, the bodies 1 and 3 being coterminous in all directions parallel to their main faces. An insulating support 5, e.g. of a ceramic, a ferrite or an oxide permanent magnet, is bonded to the ferromagnetic body 3, e.g. by an organic adhesive 4, and the semi-conductor body 1 may then be ground down to the desired thickness. Optionally, a further ferromagnetic body may be insulatedly bonded to the upper surface of the body 1 and the various layers may be selectively etched down to the support 5 to form a meander-like structure. The semiconductor body 1 may be of InAs or InSb containing acicular nickel antimonide inclusions. The ferromagnetic body 3 may be of Fe or Ni, or alloys thereof and may comprise a preformed foil or an evaporated layer which may be further built up by electrodeposition. Suitable adhesives 2 are evaporated SiO, optionally oxidized to form SiO 2 , glass solder, vitreous enamel or organic adhesives.