Speicherschirmstruktur fuer eine Elektronenstrahlspeicherroehre und Elektronenstrahlspeicherroehre mit Speicherschirm

1,225,533. Cathode-ray storage tubes; semiconductor devices. WESTERN ELECTRIC CO. Inc. 10 Sept., 1968 [12 Sept., 1967], No. 42933/68. Headings H1D and H1K. [Also in Divisions G4 and H4] The screen of a cathode-ray storage tube comprises a semi-conductive substrate 36, Fig. 2, of one conductivity type (N), an array of regions 38 of the same conductivity type (N+), an array of regions 38 of the same conductivity type (N+) but of lower resistivity, and an array of regions 37 of opposite conductivity (P) so connected that each region 38 pairs with a region 37 and the substrate to form a bi-stable element. In plan (Fig. 3, not shown), the screen comprises pairs of columns of N+ regions alternating with pairs of columns of P regions, the P columns being provided with a resistive coating 39 connecting them to conductors 40 connected to output terminal A, and the N+ columns being provided with a resistive coating 41 connecting them to conductors 41 connected to output terminal B; the resistances of the coatings 39 and 41 are made such that the elements are bi-stable when suitable potentials are applied to terminals A and B. When recording, the cathode 23 of the electron gun is at a potential (shown as - 100 volts) such that the secondary emission ratio of the elements is greater than 1, and if the beam is sufficiently strong it can forward bias the emitter (P region) to inject holes into the base at a sufficient rate to switch the element into its other state. In the initial zero state each emitter is at a potential of - 1À16 volts, and if it is switched to a " one " state it assumes the potential of + 0À25 volt. For reading, the screen is scanned with a beam at a potential between these two values (e.g. a cathode voltage of - 0-5 volt) so that an output pulse is produced when the beam impinges on a " one " element but not otherwise. The reading is non-destructive and in the example shown an input is stored at 2 frames/second and read out for display at 60 frames/second, the screen being restored to zero between successive cycles by opening switch 43. An alternative method of storing the information is to project an optical image on the substrate 36. In one example the substrate is silicon, the resistance layers 39 and 41 are antimony trisulphide, titanium dioxide, or silicon, and insulating coatings 48 for protecting the substrate from electron bombardment are of silicon dioxide.