Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht
Semi-conductor material deposited on a support is removed by heating in an atmosphere consisting of or containing a halogen or halogen compound which decomposes to give a halogen. At least the surface of the support is made of a material other than the deposited semi-conductor material and less susc...
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| creator | RUMMEL.. THEODOR |
| description | Semi-conductor material deposited on a support is removed by heating in an atmosphere consisting of or containing a halogen or halogen compound which decomposes to give a halogen. At least the surface of the support is made of a material other than the deposited semi-conductor material and less susceptible to reaction with halogen or hydrogen halide than the deposited semi-conductor. The semi-conductor deposit has formed during the deposition of layers of semi-conductor on semi-conductor members (e.g. discs) disposed on the heated support by thermal decomposition of a gaseous compound of the semi-conductor. The support may be made of another semi-conductor material, e.g. Si, SiC, or graphite. The semi-conductor deposit may be Ge, Si, AIIIBv or AIIBVI compounds. The halogen compounds may be hydrogen halides, e.g. HCl possibly with H2, or halides or hydrohalides of the semi-conductor deposit, e.g. SiCl4, SiHCl3, possibly mixed with a rare gas. Halogens specified are Cl2 and I2. |
| format | Patent |
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THEODOR</creatorcontrib><description>Semi-conductor material deposited on a support is removed by heating in an atmosphere consisting of or containing a halogen or halogen compound which decomposes to give a halogen. At least the surface of the support is made of a material other than the deposited semi-conductor material and less susceptible to reaction with halogen or hydrogen halide than the deposited semi-conductor. The semi-conductor deposit has formed during the deposition of layers of semi-conductor on semi-conductor members (e.g. discs) disposed on the heated support by thermal decomposition of a gaseous compound of the semi-conductor. The support may be made of another semi-conductor material, e.g. Si, SiC, or graphite. The semi-conductor deposit may be Ge, Si, AIIIBv or AIIBVI compounds. The halogen compounds may be hydrogen halides, e.g. HCl possibly with H2, or halides or hydrohalides of the semi-conductor deposit, e.g. SiCl4, SiHCl3, possibly mixed with a rare gas. Halogens specified are Cl2 and I2.</description><language>ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOUNDS THEREOF ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1965</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19651007&DB=EPODOC&CC=DE&NR=1202616B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19651007&DB=EPODOC&CC=DE&NR=1202616B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RUMMEL.. 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The halogen compounds may be hydrogen halides, e.g. HCl possibly with H2, or halides or hydrohalides of the semi-conductor deposit, e.g. SiCl4, SiHCl3, possibly mixed with a rare gas. 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THEODOR</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE1202616B3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>1965</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>RUMMEL.. THEODOR</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RUMMEL.. THEODOR</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht</title><date>1965-10-07</date><risdate>1965</risdate><abstract>Semi-conductor material deposited on a support is removed by heating in an atmosphere consisting of or containing a halogen or halogen compound which decomposes to give a halogen. At least the surface of the support is made of a material other than the deposited semi-conductor material and less susceptible to reaction with halogen or hydrogen halide than the deposited semi-conductor. The semi-conductor deposit has formed during the deposition of layers of semi-conductor on semi-conductor members (e.g. discs) disposed on the heated support by thermal decomposition of a gaseous compound of the semi-conductor. The support may be made of another semi-conductor material, e.g. Si, SiC, or graphite. The semi-conductor deposit may be Ge, Si, AIIIBv or AIIBVI compounds. The halogen compounds may be hydrogen halides, e.g. HCl possibly with H2, or halides or hydrohalides of the semi-conductor deposit, e.g. SiCl4, SiHCl3, possibly mixed with a rare gas. Halogens specified are Cl2 and I2.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht |
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