Monostabile Kippschaltung unter Verwendung einer Vierschichtdiode oder eines Vierschichttransistors
961,158. Assemblies for telecommunications etc.; semi-conductor devices &c. GENERAL PRECISION Inc. June 30, 1960 [July 2, 1959], No. 22873/60. Headings H1K and H1R. [Also in Division H3] A semi-conductor structure for a monostable multivibrator (see Division H3) comprises at least eleven layers...
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| creator | JONES CLARENCE S LEWANDOWSKI FRANK P |
| description | 961,158. Assemblies for telecommunications etc.; semi-conductor devices &c. GENERAL PRECISION Inc. June 30, 1960 [July 2, 1959], No. 22873/60. Headings H1K and H1R. [Also in Division H3] A semi-conductor structure for a monostable multivibrator (see Division H3) comprises at least eleven layers in series of which four (as shown the fourth to seventh) form a 4-layer breakdown diode or triode, another three (as shown, the twelfth to the fourteenth) form a transistor, a further two form a diode and the remaining two are conducting layers forming ohmic contacts with the adjacent layers and serving to connect the diode, transistor and 4- layer device together. The device shown also includes a second 2-layer diode. In alternative structures (Fig. 5, not shown) the layers are complementary to those in Fig. 4 and the two diodes are together at the top of the structure. |
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| subjects | BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PULSE TECHNIQUE SEMICONDUCTOR DEVICES |
| title | Monostabile Kippschaltung unter Verwendung einer Vierschichtdiode oder eines Vierschichttransistors |
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