Halbleitereinrichtung und Verfahren und Vorrichtung zu deren Herstellung

Halbleitereinrichtung und Verfahren und Vorrichtung zu deren Herstellung

For the purpose of removing an oxide film on the surface of a varying metal electroconductive material used for wiring in a semiconductor device without inflicting damage on a peripheral structure, the oxide film formed on the surface of a metal electroconductive region 12 is subjected to a reducing...

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Hauptverfasser: SHIRAKAWA, NAOKI, IKEDA, SHINICHI, GOFUKU, EISHI, YOSHIDA, YOSHIYUKI, ENDO, KAZUHIKO
Format: Patent
Sprache:ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SHIRAKAWA, NAOKI
IKEDA, SHINICHI
GOFUKU, EISHI
YOSHIDA, YOSHIYUKI
ENDO, KAZUHIKO
description For the purpose of removing an oxide film on the surface of a varying metal electroconductive material used for wiring in a semiconductor device without inflicting damage on a peripheral structure, the oxide film formed on the surface of a metal electroconductive region 12 is subjected to a reducing treatment that is effected by placing the metal electroconductive region 12 in a reducing treatment chamber 22, causing an oxygen pump 30 to introduce into the reducing treatment chamber 22 an inert gas having at least an oxygen partial pressure thereof suppressed to 1x10-13 atmosphere or less and heating the metal electroconductive region 12 with a heating device 25.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_DE112006000307TT5</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>DE112006000307TT5</sourcerecordid><originalsourceid>FETCH-epo_espacenet_DE112006000307TT53</originalsourceid><addsrcrecordid>eNrjZPDwSMxJyknNLEktSs3MK8pMzigpzUtXKM1LUQhLLUpLzChKzYPw8ovgslWlCimpIAmP1KLiktScHKAgDwNrWmJOcSovlOZmUHNzDXH20E0tyI9PLS5ITE7NSy2Jd3E1NDQyMDAzMDAwNjAPCTE1JlohABKkNzk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Halbleitereinrichtung und Verfahren und Vorrichtung zu deren Herstellung</title><source>esp@cenet</source><creator>SHIRAKAWA, NAOKI ; IKEDA, SHINICHI ; GOFUKU, EISHI ; YOSHIDA, YOSHIYUKI ; ENDO, KAZUHIKO</creator><creatorcontrib>SHIRAKAWA, NAOKI ; IKEDA, SHINICHI ; GOFUKU, EISHI ; YOSHIDA, YOSHIYUKI ; ENDO, KAZUHIKO</creatorcontrib><description>For the purpose of removing an oxide film on the surface of a varying metal electroconductive material used for wiring in a semiconductor device without inflicting damage on a peripheral structure, the oxide film formed on the surface of a metal electroconductive region 12 is subjected to a reducing treatment that is effected by placing the metal electroconductive region 12 in a reducing treatment chamber 22, causing an oxygen pump 30 to introduce into the reducing treatment chamber 22 an inert gas having at least an oxygen partial pressure thereof suppressed to 1x10-13 atmosphere or less and heating the metal electroconductive region 12 with a heating device 25.</description><language>ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20080417&amp;DB=EPODOC&amp;CC=DE&amp;NR=112006000307T5$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20080417&amp;DB=EPODOC&amp;CC=DE&amp;NR=112006000307T5$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIRAKAWA, NAOKI</creatorcontrib><creatorcontrib>IKEDA, SHINICHI</creatorcontrib><creatorcontrib>GOFUKU, EISHI</creatorcontrib><creatorcontrib>YOSHIDA, YOSHIYUKI</creatorcontrib><creatorcontrib>ENDO, KAZUHIKO</creatorcontrib><title>Halbleitereinrichtung und Verfahren und Vorrichtung zu deren Herstellung</title><description>For the purpose of removing an oxide film on the surface of a varying metal electroconductive material used for wiring in a semiconductor device without inflicting damage on a peripheral structure, the oxide film formed on the surface of a metal electroconductive region 12 is subjected to a reducing treatment that is effected by placing the metal electroconductive region 12 in a reducing treatment chamber 22, causing an oxygen pump 30 to introduce into the reducing treatment chamber 22 an inert gas having at least an oxygen partial pressure thereof suppressed to 1x10-13 atmosphere or less and heating the metal electroconductive region 12 with a heating device 25.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPDwSMxJyknNLEktSs3MK8pMzigpzUtXKM1LUQhLLUpLzChKzYPw8ovgslWlCimpIAmP1KLiktScHKAgDwNrWmJOcSovlOZmUHNzDXH20E0tyI9PLS5ITE7NSy2Jd3E1NDQyMDAzMDAwNjAPCTE1JlohABKkNzk</recordid><startdate>20080417</startdate><enddate>20080417</enddate><creator>SHIRAKAWA, NAOKI</creator><creator>IKEDA, SHINICHI</creator><creator>GOFUKU, EISHI</creator><creator>YOSHIDA, YOSHIYUKI</creator><creator>ENDO, KAZUHIKO</creator><scope>EVB</scope></search><sort><creationdate>20080417</creationdate><title>Halbleitereinrichtung und Verfahren und Vorrichtung zu deren Herstellung</title><author>SHIRAKAWA, NAOKI ; IKEDA, SHINICHI ; GOFUKU, EISHI ; YOSHIDA, YOSHIYUKI ; ENDO, KAZUHIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE112006000307TT53</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIRAKAWA, NAOKI</creatorcontrib><creatorcontrib>IKEDA, SHINICHI</creatorcontrib><creatorcontrib>GOFUKU, EISHI</creatorcontrib><creatorcontrib>YOSHIDA, YOSHIYUKI</creatorcontrib><creatorcontrib>ENDO, KAZUHIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIRAKAWA, NAOKI</au><au>IKEDA, SHINICHI</au><au>GOFUKU, EISHI</au><au>YOSHIDA, YOSHIYUKI</au><au>ENDO, KAZUHIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Halbleitereinrichtung und Verfahren und Vorrichtung zu deren Herstellung</title><date>2008-04-17</date><risdate>2008</risdate><abstract>For the purpose of removing an oxide film on the surface of a varying metal electroconductive material used for wiring in a semiconductor device without inflicting damage on a peripheral structure, the oxide film formed on the surface of a metal electroconductive region 12 is subjected to a reducing treatment that is effected by placing the metal electroconductive region 12 in a reducing treatment chamber 22, causing an oxygen pump 30 to introduce into the reducing treatment chamber 22 an inert gas having at least an oxygen partial pressure thereof suppressed to 1x10-13 atmosphere or less and heating the metal electroconductive region 12 with a heating device 25.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Halbleitereinrichtung und Verfahren und Vorrichtung zu deren Herstellung
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T17%3A06%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SHIRAKAWA,%20NAOKI&rft.date=2008-04-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EDE112006000307TT5%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true