Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SCHWEICKERT NAT. HANS, REUSCHEL PHIL. NAT. KONRAD, GUTSCHE PHIL. NAT. HEINRICH
Format: Patent
Sprache:ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator SCHWEICKERT NAT. HANS
REUSCHEL PHIL. NAT. KONRAD
GUTSCHE PHIL. NAT. HEINRICH
description
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_DE1061593B</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>DE1061593B</sourcerecordid><originalsourceid>FETCH-epo_espacenet_DE1061593B3</originalsourceid><addsrcrecordid>eNqFikEKwjAUBbNxIeoZzAUES1Fwq1Z7gOLCTYnh1Xwaf8pPQsHTW8G9mxkGZq6aWxAh61Lmp35n0VeMxPwtAXFMYF0b__CgBHmZCWR81F2GaHj0SUKCdUzROuj7CNtjqWbdNGH180KtL1VzqjcYQos4GAtGas9Vsd0Xu0N5LP8fH2TYOT4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke</title><source>esp@cenet</source><creator>SCHWEICKERT NAT. HANS ; REUSCHEL PHIL. NAT. KONRAD ; GUTSCHE PHIL. NAT. HEINRICH</creator><creatorcontrib>SCHWEICKERT NAT. HANS ; REUSCHEL PHIL. NAT. KONRAD ; GUTSCHE PHIL. NAT. HEINRICH</creatorcontrib><language>ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOUNDS THEREOF ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FERROUS OR NON-FERROUS ALLOYS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; PRETREATMENT OF RAW MATERIALS ; PRODUCTION AND REFINING OF METALS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF ALLOYS OR NON-FERROUS METALS ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1959</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19590716&amp;DB=EPODOC&amp;CC=DE&amp;NR=1061593B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19590716&amp;DB=EPODOC&amp;CC=DE&amp;NR=1061593B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SCHWEICKERT NAT. HANS</creatorcontrib><creatorcontrib>REUSCHEL PHIL. NAT. KONRAD</creatorcontrib><creatorcontrib>GUTSCHE PHIL. NAT. HEINRICH</creatorcontrib><title>Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke</title><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOUNDS THEREOF</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FERROUS OR NON-FERROUS ALLOYS</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PRETREATMENT OF RAW MATERIALS</subject><subject>PRODUCTION AND REFINING OF METALS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1959</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFikEKwjAUBbNxIeoZzAUES1Fwq1Z7gOLCTYnh1Xwaf8pPQsHTW8G9mxkGZq6aWxAh61Lmp35n0VeMxPwtAXFMYF0b__CgBHmZCWR81F2GaHj0SUKCdUzROuj7CNtjqWbdNGH180KtL1VzqjcYQos4GAtGas9Vsd0Xu0N5LP8fH2TYOT4</recordid><startdate>19590716</startdate><enddate>19590716</enddate><creator>SCHWEICKERT NAT. HANS</creator><creator>REUSCHEL PHIL. NAT. KONRAD</creator><creator>GUTSCHE PHIL. NAT. HEINRICH</creator><scope>EVB</scope></search><sort><creationdate>19590716</creationdate><title>Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke</title><author>SCHWEICKERT NAT. HANS ; REUSCHEL PHIL. NAT. KONRAD ; GUTSCHE PHIL. NAT. HEINRICH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE1061593B3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>1959</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOUNDS THEREOF</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FERROUS OR NON-FERROUS ALLOYS</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PRETREATMENT OF RAW MATERIALS</topic><topic>PRODUCTION AND REFINING OF METALS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TREATMENT OF ALLOYS OR NON-FERROUS METALS</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>SCHWEICKERT NAT. HANS</creatorcontrib><creatorcontrib>REUSCHEL PHIL. NAT. KONRAD</creatorcontrib><creatorcontrib>GUTSCHE PHIL. NAT. HEINRICH</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SCHWEICKERT NAT. HANS</au><au>REUSCHEL PHIL. NAT. KONRAD</au><au>GUTSCHE PHIL. NAT. HEINRICH</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke</title><date>1959-07-16</date><risdate>1959</risdate><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language ger
recordid cdi_epo_espacenet_DE1061593B
source esp@cenet
subjects AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
COMPOUNDS THEREOF
CRYSTAL GROWTH
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FERROUS OR NON-FERROUS ALLOYS
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PRETREATMENT OF RAW MATERIALS
PRODUCTION AND REFINING OF METALS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
TREATMENT OF ALLOYS OR NON-FERROUS METALS
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T02%3A46%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SCHWEICKERT%20NAT.%20HANS&rft.date=1959-07-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EDE1061593B%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true