Silicon-on-insulator substrate comprises bulk substrate, insulating layer, active semiconductor layer, and diffusion barrier layer having thickness and composition that prevent copper atoms from diffusing through

A silicon-on-insulator substrate comprises a bulk substrate (110), an insulating layer (121); an active semiconductor layer (124) above the insulating layer; and a diffusion barrier layer (111) between the bulk substrate and the active semiconductor layer. A thickness and a composition of diffusion...

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Bibliographische Detailangaben

Hauptverfasser:	GROSCHOPF, JOHANNES, ZISTL, CHRISTIAN, AMINPUR, MASSUD
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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