Verfahren zum Herstellen eines SOI-Feldeffekttransistors und SOI-Feldeffekttransistor

The invention relates to a method for producing an SOI field effect transistor and to a corresponding SOI field effect transistor. The method for producing an SOI field effect transistor with defined transistor properties is characterized by forming on a substrate a laterally limited sequence of layers comprising a gate-insulating layer and a gate region. A spacer layer having a defined thickness is formed on at least a part of the lateral walls of the laterally limited sequence of layers. Two source/drain regions having a defined dopant concentration profile are produced by introducing a dopant in two surface regions of the substrate which are contiguous to the spacer layer, whereby the sequence of layers and the spacer layer are arranged in such a manner as to form a screening structure for preventing dopant from being introduced into a surface region of the substrate between the two source/drain regions. The transistor properties of the SOI field effect transistor are adjusted by adjusting the thickness of the spacer layer and by adjusting the dopant concentration profile.