Halbleitervorrichtung

Halbleitervorrichtung

A semiconductor device, which is a diode, includes the following: an n cathode layer, which is an n-type region, disposed in a surface layer of a semiconductor substrate; a p cathode layer, which is a p-type region, disposed in the surface layer; and a cathode electrode, which is a metal electrode,...

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Hauptverfasser: Tanaka, Koji, Masuoka, Fumihito
Format: Patent
Sprache:ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Tanaka, Koji
Masuoka, Fumihito
description A semiconductor device, which is a diode, includes the following: an n cathode layer, which is an n-type region, disposed in a surface layer of a semiconductor substrate; a p cathode layer, which is a p-type region, disposed in the surface layer; and a cathode electrode, which is a metal electrode, in contact with both of the n cathode layer and the p cathode layer. The cathode electrode includes a first metal layer in contact with both of the n cathode layer and the p cathode layer, and a second metal layer disposed on the first metal layer. A contact surface between the first metal layer and the second metal layer has an oxygen concentration lower than the oxygen concentration of a contact surface between the first metal layer, and the n cathode layer and the p cathode layer.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_DE102018219656A8</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>DE102018219656A8</sourcerecordid><originalsourceid>FETCH-epo_espacenet_DE102018219656A83</originalsourceid><addsrcrecordid>eNrjZBD1SMxJyknNLEktKssvKspMzigpzUvnYWBNS8wpTuWF0twMqm6uIc4euqkF-fGpxQWJyal5qSXxLq6GBkYGhhZGhpZmpmaOFsbEqgMAtMkjTQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Halbleitervorrichtung</title><source>esp@cenet</source><creator>Tanaka, Koji ; Masuoka, Fumihito</creator><creatorcontrib>Tanaka, Koji ; Masuoka, Fumihito</creatorcontrib><description>A semiconductor device, which is a diode, includes the following: an n cathode layer, which is an n-type region, disposed in a surface layer of a semiconductor substrate; a p cathode layer, which is a p-type region, disposed in the surface layer; and a cathode electrode, which is a metal electrode, in contact with both of the n cathode layer and the p cathode layer. The cathode electrode includes a first metal layer in contact with both of the n cathode layer and the p cathode layer, and a second metal layer disposed on the first metal layer. A contact surface between the first metal layer and the second metal layer has an oxygen concentration lower than the oxygen concentration of a contact surface between the first metal layer, and the n cathode layer and the p cathode layer.</description><language>ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190801&amp;DB=EPODOC&amp;CC=DE&amp;NR=102018219656A8$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190801&amp;DB=EPODOC&amp;CC=DE&amp;NR=102018219656A8$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Tanaka, Koji</creatorcontrib><creatorcontrib>Masuoka, Fumihito</creatorcontrib><title>Halbleitervorrichtung</title><description>A semiconductor device, which is a diode, includes the following: an n cathode layer, which is an n-type region, disposed in a surface layer of a semiconductor substrate; a p cathode layer, which is a p-type region, disposed in the surface layer; and a cathode electrode, which is a metal electrode, in contact with both of the n cathode layer and the p cathode layer. The cathode electrode includes a first metal layer in contact with both of the n cathode layer and the p cathode layer, and a second metal layer disposed on the first metal layer. A contact surface between the first metal layer and the second metal layer has an oxygen concentration lower than the oxygen concentration of a contact surface between the first metal layer, and the n cathode layer and the p cathode layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBD1SMxJyknNLEktKssvKspMzigpzUvnYWBNS8wpTuWF0twMqm6uIc4euqkF-fGpxQWJyal5qSXxLq6GBkYGhhZGhpZmpmaOFsbEqgMAtMkjTQ</recordid><startdate>20190801</startdate><enddate>20190801</enddate><creator>Tanaka, Koji</creator><creator>Masuoka, Fumihito</creator><scope>EVB</scope></search><sort><creationdate>20190801</creationdate><title>Halbleitervorrichtung</title><author>Tanaka, Koji ; Masuoka, Fumihito</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE102018219656A83</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Tanaka, Koji</creatorcontrib><creatorcontrib>Masuoka, Fumihito</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tanaka, Koji</au><au>Masuoka, Fumihito</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Halbleitervorrichtung</title><date>2019-08-01</date><risdate>2019</risdate><abstract>A semiconductor device, which is a diode, includes the following: an n cathode layer, which is an n-type region, disposed in a surface layer of a semiconductor substrate; a p cathode layer, which is a p-type region, disposed in the surface layer; and a cathode electrode, which is a metal electrode, in contact with both of the n cathode layer and the p cathode layer. The cathode electrode includes a first metal layer in contact with both of the n cathode layer and the p cathode layer, and a second metal layer disposed on the first metal layer. A contact surface between the first metal layer and the second metal layer has an oxygen concentration lower than the oxygen concentration of a contact surface between the first metal layer, and the n cathode layer and the p cathode layer.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Halbleitervorrichtung
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T16%3A19%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Tanaka,%20Koji&rft.date=2019-08-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EDE102018219656A8%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true