Power semiconductor device e.g. insulated gate bipolar transistor (IGBT) for use in power semiconductor module, has power semiconductor component whose lateral edges are arranged on conductor line, adjacent to non-conductive insulator

The device (1) has a substrate (2) that comprises an electrically conductive conductor line (5a) which is arranged on a side surface (22) of an electrically non-conductive insulating material (4). A power semiconductor component (T1) having a lower and upper load current terminals (C,E) is located o...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SAGEBAUM, ULRICH, AUGUSTIN, KARLHEINZ
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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