Method for forming oxide layer on substrate e.g. silicon-on-insulator substrate, for manufacturing e.g. mobile telephone, involves oxidizing precursory layer of certain material to obtain oxide layer of certain material

The method involves supplying reaction gas on a substrate, where the reaction gas exhibits an organic compound comprising reaction-restraining functional groups. A layer of reaction-restraining functional groups is formed (S11) on a surface of the substrate. A precursory layer of a certain material...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LEE, JONG CHEOL, KIM, YOUN-SOO, KANG, SANG-YEOL, CHUNG, SUK-JIN, YOO, CHA-YOUNG
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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