Channeling vacuum process systems, comprises feeding air in a lock chamber of the vacuum process system until pressure is equally large within and outside of the lock chamber, and opening the lock chamber to atmosphere
The method comprises feeding air in a lock chamber of a vacuum process system until the pressure is equally large within and outside of the lock chamber, where air admitted in the lock chamber has a lower water content with respect to the ambient air, opening the lock chamber to the atmosphere, intr...
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description | The method comprises feeding air in a lock chamber of a vacuum process system until the pressure is equally large within and outside of the lock chamber, where air admitted in the lock chamber has a lower water content with respect to the ambient air, opening the lock chamber to the atmosphere, introducing a substrate along a transportation path through an aperture in the lock chamber, where the substrate is passed into the vacuum chamber, and again feeding air into the lock chamber even after reaching the pressure prevailing outside the lock chamber and after opening the lock chamber. The method comprises feeding air in a lock chamber of a vacuum process system until the pressure is equally large within and outside of the lock chamber, where air admitted in the lock chamber has a lower water content with respect to the ambient air, opening the lock chamber to the atmosphere, introducing a substrate along a transportation path through an aperture in the lock chamber, where the substrate is passed into the vacuum chamber, again feeding air into the lock chamber even after reaching the pressure prevailing outside the lock chamber and after opening the lock chamber, where air has a lower water content relative to the ambient air, and discharging air from the lock chamber from the time of reaching the atmospheric pressure in the lock chamber. The volume flow of the fed air is reduced after reaching the atmospheric pressure. Air is fed in partial volume flows at two locations along the transportation path of the substrate and air is omitted in the partial volume flows at two locations along the transportation path of the substrate. The partial volumetric flow decreases in the transportation path of the substrate. A sum of all partial volumetric flows of fed air is larger than the sum of all partial volumetric flows of omitted air.
Die Erfindung betrifft ein Schleusungsverfahren für Vakuumprozessanlagen, bei dem in mindestens eine Schleusenkammer der Vakuumprozessanlage Luft eingelassen wird, bis innerhalb und außerhalb der Schleusenkammer der Druck gleich groß ist, wobei die in die Schleusenkammer eingelassene Luft einen gegenüber der Umgebungsluft geringeren Wassergehalt aufweist, anschließend die Schleusenkammer zur Atmosng eines Transportwegs durch die Öffnung in die Schleusenkammer eingebracht und nachfolgend in eine an die Schleusenkammer anschließende Vakuumkammer übergeben. wird, und wobei auch nach Erreichen des außerhalb der Schleusenkammer herrschende |
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Die Erfindung betrifft ein Schleusungsverfahren für Vakuumprozessanlagen, bei dem in mindestens eine Schleusenkammer der Vakuumprozessanlage Luft eingelassen wird, bis innerhalb und außerhalb der Schleusenkammer der Druck gleich groß ist, wobei die in die Schleusenkammer eingelassene Luft einen gegenüber der Umgebungsluft geringeren Wassergehalt aufweist, anschließend die Schleusenkammer zur Atmosng eines Transportwegs durch die Öffnung in die Schleusenkammer eingebracht und nachfolgend in eine an die Schleusenkammer anschließende Vakuumkammer übergeben. wird, und wobei auch nach Erreichen des außerhalb der Schleusenkammer herrschenden Drucks und nach dem Öffnen der Schleusenkammer weiter Luft in die Schleusenkammer eingelassen wird, die einen gegenüber der Umgebungsluft geringeren Wassergehalt aufweist.</description><language>eng ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121004&DB=EPODOC&CC=DE&NR=102011006462A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121004&DB=EPODOC&CC=DE&NR=102011006462A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BOTZLER, PETER</creatorcontrib><creatorcontrib>GEHLERT, MARKUS</creatorcontrib><creatorcontrib>KRAUSE, JOCHEN</creatorcontrib><title>Channeling vacuum process systems, comprises feeding air in a lock chamber of the vacuum process system until pressure is equally large within and outside of the lock chamber, and opening the lock chamber to atmosphere</title><description>The method comprises feeding air in a lock chamber of a vacuum process system until the pressure is equally large within and outside of the lock chamber, where air admitted in the lock chamber has a lower water content with respect to the ambient air, opening the lock chamber to the atmosphere, introducing a substrate along a transportation path through an aperture in the lock chamber, where the substrate is passed into the vacuum chamber, and again feeding air into the lock chamber even after reaching the pressure prevailing outside the lock chamber and after opening the lock chamber. The method comprises feeding air in a lock chamber of a vacuum process system until the pressure is equally large within and outside of the lock chamber, where air admitted in the lock chamber has a lower water content with respect to the ambient air, opening the lock chamber to the atmosphere, introducing a substrate along a transportation path through an aperture in the lock chamber, where the substrate is passed into the vacuum chamber, again feeding air into the lock chamber even after reaching the pressure prevailing outside the lock chamber and after opening the lock chamber, where air has a lower water content relative to the ambient air, and discharging air from the lock chamber from the time of reaching the atmospheric pressure in the lock chamber. The volume flow of the fed air is reduced after reaching the atmospheric pressure. Air is fed in partial volume flows at two locations along the transportation path of the substrate and air is omitted in the partial volume flows at two locations along the transportation path of the substrate. The partial volumetric flow decreases in the transportation path of the substrate. A sum of all partial volumetric flows of fed air is larger than the sum of all partial volumetric flows of omitted air.
Die Erfindung betrifft ein Schleusungsverfahren für Vakuumprozessanlagen, bei dem in mindestens eine Schleusenkammer der Vakuumprozessanlage Luft eingelassen wird, bis innerhalb und außerhalb der Schleusenkammer der Druck gleich groß ist, wobei die in die Schleusenkammer eingelassene Luft einen gegenüber der Umgebungsluft geringeren Wassergehalt aufweist, anschließend die Schleusenkammer zur Atmosng eines Transportwegs durch die Öffnung in die Schleusenkammer eingebracht und nachfolgend in eine an die Schleusenkammer anschließende Vakuumkammer übergeben. wird, und wobei auch nach Erreichen des außerhalb der Schleusenkammer herrschenden Drucks und nach dem Öffnen der Schleusenkammer weiter Luft in die Schleusenkammer eingelassen wird, die einen gegenüber der Umgebungsluft geringeren Wassergehalt aufweist.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjs1KA0EQhPfiQaLvUBdvEXaj5C4x4gN4D-1sbWZw_jI9o-RVfRqzqCDiwVND1cdXfd69b6zESO_iHq9iWgvIJRmqQo9aGXQJk0IuTqmYyHEmxRW4CIFP5gXGSnhmQZpQLf_WoMXq_Ck8Ra0QTsFDE--P8FL2xJurdlbGEalVdSO_fT83lp9AZpzf-N2iJkgNSbNl4UV3NolXXn7dRXf1sH3aPF4zpx01i2Fk3d1vh37VD0Pfr2_Xq7vh5r_cBzznbBg</recordid><startdate>20121004</startdate><enddate>20121004</enddate><creator>BOTZLER, PETER</creator><creator>GEHLERT, MARKUS</creator><creator>KRAUSE, JOCHEN</creator><scope>EVB</scope></search><sort><creationdate>20121004</creationdate><title>Channeling vacuum process systems, comprises feeding air in a lock chamber of the vacuum process system until pressure is equally large within and outside of the lock chamber, and opening the lock chamber to atmosphere</title><author>BOTZLER, PETER ; GEHLERT, MARKUS ; KRAUSE, JOCHEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE102011006462A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; ger</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>BOTZLER, PETER</creatorcontrib><creatorcontrib>GEHLERT, MARKUS</creatorcontrib><creatorcontrib>KRAUSE, JOCHEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BOTZLER, PETER</au><au>GEHLERT, MARKUS</au><au>KRAUSE, JOCHEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Channeling vacuum process systems, comprises feeding air in a lock chamber of the vacuum process system until pressure is equally large within and outside of the lock chamber, and opening the lock chamber to atmosphere</title><date>2012-10-04</date><risdate>2012</risdate><abstract>The method comprises feeding air in a lock chamber of a vacuum process system until the pressure is equally large within and outside of the lock chamber, where air admitted in the lock chamber has a lower water content with respect to the ambient air, opening the lock chamber to the atmosphere, introducing a substrate along a transportation path through an aperture in the lock chamber, where the substrate is passed into the vacuum chamber, and again feeding air into the lock chamber even after reaching the pressure prevailing outside the lock chamber and after opening the lock chamber. The method comprises feeding air in a lock chamber of a vacuum process system until the pressure is equally large within and outside of the lock chamber, where air admitted in the lock chamber has a lower water content with respect to the ambient air, opening the lock chamber to the atmosphere, introducing a substrate along a transportation path through an aperture in the lock chamber, where the substrate is passed into the vacuum chamber, again feeding air into the lock chamber even after reaching the pressure prevailing outside the lock chamber and after opening the lock chamber, where air has a lower water content relative to the ambient air, and discharging air from the lock chamber from the time of reaching the atmospheric pressure in the lock chamber. The volume flow of the fed air is reduced after reaching the atmospheric pressure. Air is fed in partial volume flows at two locations along the transportation path of the substrate and air is omitted in the partial volume flows at two locations along the transportation path of the substrate. The partial volumetric flow decreases in the transportation path of the substrate. A sum of all partial volumetric flows of fed air is larger than the sum of all partial volumetric flows of omitted air.
Die Erfindung betrifft ein Schleusungsverfahren für Vakuumprozessanlagen, bei dem in mindestens eine Schleusenkammer der Vakuumprozessanlage Luft eingelassen wird, bis innerhalb und außerhalb der Schleusenkammer der Druck gleich groß ist, wobei die in die Schleusenkammer eingelassene Luft einen gegenüber der Umgebungsluft geringeren Wassergehalt aufweist, anschließend die Schleusenkammer zur Atmosng eines Transportwegs durch die Öffnung in die Schleusenkammer eingebracht und nachfolgend in eine an die Schleusenkammer anschließende Vakuumkammer übergeben. wird, und wobei auch nach Erreichen des außerhalb der Schleusenkammer herrschenden Drucks und nach dem Öffnen der Schleusenkammer weiter Luft in die Schleusenkammer eingelassen wird, die einen gegenüber der Umgebungsluft geringeren Wassergehalt aufweist.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | Channeling vacuum process systems, comprises feeding air in a lock chamber of the vacuum process system until pressure is equally large within and outside of the lock chamber, and opening the lock chamber to atmosphere |
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