Producing polycrystalline silicon ingots/blocks, by placing a crucible in a process chamber, and heating a solid silicon material in the crucible above a melting temperature of the silicon material to form molten silicon in the crucible

The process comprises placing a crucible (6) in a process chamber (4), heating a solid silicon material in the crucible above a melting temperature of the silicon material to form molten silicon in the crucible, cooling the silicon material in the crucible below a solidification temperature of the m...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KLOOS, RALF, HOESS, CHRISTIAN, PROKOPENKO, OLEKSANDR, HUSSY, STEPHAN
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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