Verfahren zum Herstellen von Halbleiterbauelementen und Halbleiterbauelement

A semiconductor device includes a semiconductor body of a first semiconductive material. A transistor is disposed in the semiconductor body. The transistor includes source and drain regions of a second semiconductive material embedded in the semiconductor body. A resistor overlies a top surface of t...

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Bibliographische Detailangaben
Hauptverfasser: STAHRENBERG, KNUT, HAN, JIN-PING
Format: Patent
Sprache:ger
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Beschreibung
Zusammenfassung:A semiconductor device includes a semiconductor body of a first semiconductive material. A transistor is disposed in the semiconductor body. The transistor includes source and drain regions of a second semiconductive material embedded in the semiconductor body. A resistor overlies a top surface of the semiconductor body and is laterally spaced from the transistor. The resistor is formed from the second semiconductive material.