Halbleiterbauelement mit Anschlusskontaktfläche

Halbleiterbauelement mit Anschlusskontaktfläche

At least one terminal contact surface (1) is formed on a topmost metal plane (2). Under it, in a secondmost metal plane (3), is a reinforcement region (8), in which the secondmost metal plane (3) is structured within its two-dimensional extent such that a part of the area of the vertical (with respe...

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Hauptverfasser: VESCOLI, VERENA, MINIXHOFER, RAINER
Format: Patent
Sprache:ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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MINIXHOFER, RAINER
description At least one terminal contact surface (1) is formed on a topmost metal plane (2). Under it, in a secondmost metal plane (3), is a reinforcement region (8), in which the secondmost metal plane (3) is structured within its two-dimensional extent such that a part of the area of the vertical (with respect to the metal plane) projection of the terminal contact surface (1) onto the secondmost metal plane (3) that is occupied by the metal of the secondmost metal plane (3) amounts to at least one third of the area.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_DE102007011126B4</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>DE102007011126B4</sourcerecordid><originalsourceid>FETCH-epo_espacenet_DE102007011126B43</originalsourceid><addsrcrecordid>eNrjZDDwSMxJyknNLEktSkosTc1JzU3NK1HIzSxRcMwrTs7IKS0uzs7PK0nMLknLObwkOSOVh4E1LTGnOJUXSnMzqLq5hjh76KYW5MenFhckJqfmpZbEu7gaGhgZGJgbGBoaGpk5mRgTqw4AXA4uRA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Halbleiterbauelement mit Anschlusskontaktfläche</title><source>esp@cenet</source><creator>VESCOLI, VERENA ; MINIXHOFER, RAINER</creator><creatorcontrib>VESCOLI, VERENA ; MINIXHOFER, RAINER</creatorcontrib><description>At least one terminal contact surface (1) is formed on a topmost metal plane (2). Under it, in a secondmost metal plane (3), is a reinforcement region (8), in which the secondmost metal plane (3) is structured within its two-dimensional extent such that a part of the area of the vertical (with respect to the metal plane) projection of the terminal contact surface (1) onto the secondmost metal plane (3) that is occupied by the metal of the secondmost metal plane (3) amounts to at least one third of the area.</description><language>ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090827&amp;DB=EPODOC&amp;CC=DE&amp;NR=102007011126B4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090827&amp;DB=EPODOC&amp;CC=DE&amp;NR=102007011126B4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VESCOLI, VERENA</creatorcontrib><creatorcontrib>MINIXHOFER, RAINER</creatorcontrib><title>Halbleiterbauelement mit Anschlusskontaktfläche</title><description>At least one terminal contact surface (1) is formed on a topmost metal plane (2). Under it, in a secondmost metal plane (3), is a reinforcement region (8), in which the secondmost metal plane (3) is structured within its two-dimensional extent such that a part of the area of the vertical (with respect to the metal plane) projection of the terminal contact surface (1) onto the secondmost metal plane (3) that is occupied by the metal of the secondmost metal plane (3) amounts to at least one third of the area.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDwSMxJyknNLEktSkosTc1JzU3NK1HIzSxRcMwrTs7IKS0uzs7PK0nMLknLObwkOSOVh4E1LTGnOJUXSnMzqLq5hjh76KYW5MenFhckJqfmpZbEu7gaGhgZGJgbGBoaGpk5mRgTqw4AXA4uRA</recordid><startdate>20090827</startdate><enddate>20090827</enddate><creator>VESCOLI, VERENA</creator><creator>MINIXHOFER, RAINER</creator><scope>EVB</scope></search><sort><creationdate>20090827</creationdate><title>Halbleiterbauelement mit Anschlusskontaktfläche</title><author>VESCOLI, VERENA ; MINIXHOFER, RAINER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE102007011126B43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>VESCOLI, VERENA</creatorcontrib><creatorcontrib>MINIXHOFER, RAINER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>VESCOLI, VERENA</au><au>MINIXHOFER, RAINER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Halbleiterbauelement mit Anschlusskontaktfläche</title><date>2009-08-27</date><risdate>2009</risdate><abstract>At least one terminal contact surface (1) is formed on a topmost metal plane (2). Under it, in a secondmost metal plane (3), is a reinforcement region (8), in which the secondmost metal plane (3) is structured within its two-dimensional extent such that a part of the area of the vertical (with respect to the metal plane) projection of the terminal contact surface (1) onto the secondmost metal plane (3) that is occupied by the metal of the secondmost metal plane (3) amounts to at least one third of the area.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Halbleiterbauelement mit Anschlusskontaktfläche
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T05%3A37%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=VESCOLI,%20VERENA&rft.date=2009-08-27&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EDE102007011126B4%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true