Halbleiterstruktur und Verfahren zu ihrer Herstellung

Halbleiterstruktur und Verfahren zu ihrer Herstellung

The method involves providing a semiconductor substrate (200) comprising a layer of dielectric material (210), where a recess is provided in the layer of dielectric material. The recess is filled with a material comprising silver. A layer of material comprising rhodium (214) is formed over one of a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: STRECK, CHRISTOF, KAHLERT, VOLKER
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The method involves providing a semiconductor substrate (200) comprising a layer of dielectric material (210), where a recess is provided in the layer of dielectric material. The recess is filled with a material comprising silver. A layer of material comprising rhodium (214) is formed over one of a sidewall and a bottom surface of the recess before filling the recess with the material comprising silver (216). The layer of material comprising rhodium is additionally formed over portions of a semiconductor substrate outside the recess.