Semiconductor wafer useful for the production of electronic components, comprises inner area arranged in the middle of the wafer, outer area, and a first surface, which is formed of a semiconductor element in the inner area
The semiconductor wafer useful for the production of electronic components, comprises inner area (2) arranged in the middle of the wafer, outer area (3), and first surface (4), which is formed of a semiconductor element in the inner area. The outer area extends from a rotating edge of the semiconduc...
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| creator | LACKNER, GERALD SANTOS RODRIGUEZ, FRANCISCO JAVIER FATHULLA, AHMAD GROMMES, WALTHER |
| description | The semiconductor wafer useful for the production of electronic components, comprises inner area (2) arranged in the middle of the wafer, outer area (3), and first surface (4), which is formed of a semiconductor element in the inner area. The outer area extends from a rotating edge of the semiconductor wafer to the inner area. The inner area and the outer area are formed from the single piece semiconductor material. A step forms a transition from the outer area to the inner area. The outer area is thicker than the inner area. The semiconductor wafer useful for the production of electronic components, comprises inner area (2) arranged in the middle of the wafer, outer area (3), and first surface (4), which is formed of a semiconductor element in the inner area. The outer area extends from a rotating edge of the semiconductor wafer to the inner area. The inner area and the outer area are formed from the single piece semiconductor material. A step forms a transition from the outer area to the inner area. The outer area is thicker than the inner area and in comparison to the inner area occupies small portion of the semiconductor wafer. At the first surface a semiconductor element in the inner area is formed. An independent claim is included for a method for the production of semiconductor wafer.
Eine Halbleiterscheibe aus einem Halbleitermaterial weist auf einen inneren Bereich um die Mittel der Halbleiterscheibe herum und einen äußeren Bereich. Der äußere Bereich erstreckt sich, ausgehend von einem umlaufenden Rand der Halbleiterscheibe, bis zum inneren Bereich. Der äußere Bereich ist im Vergleich zum inneren Bereich dicker. Der innere Bereich und der äußere Bereich sind einstückig aus dem Halbleitermaterial ausgebildet. |
| format | Patent |
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Eine Halbleiterscheibe aus einem Halbleitermaterial weist auf einen inneren Bereich um die Mittel der Halbleiterscheibe herum und einen äußeren Bereich. Der äußere Bereich erstreckt sich, ausgehend von einem umlaufenden Rand der Halbleiterscheibe, bis zum inneren Bereich. Der äußere Bereich ist im Vergleich zum inneren Bereich dicker. Der innere Bereich und der äußere Bereich sind einstückig aus dem Halbleitermaterial ausgebildet.</description><language>eng ; ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20071011&DB=EPODOC&CC=DE&NR=102006015781A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20071011&DB=EPODOC&CC=DE&NR=102006015781A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LACKNER, GERALD</creatorcontrib><creatorcontrib>SANTOS RODRIGUEZ, FRANCISCO JAVIER</creatorcontrib><creatorcontrib>FATHULLA, AHMAD</creatorcontrib><creatorcontrib>GROMMES, WALTHER</creatorcontrib><title>Semiconductor wafer useful for the production of electronic components, comprises inner area arranged in the middle of the wafer, outer area, and a first surface, which is formed of a semiconductor element in the inner area</title><description>The semiconductor wafer useful for the production of electronic components, comprises inner area (2) arranged in the middle of the wafer, outer area (3), and first surface (4), which is formed of a semiconductor element in the inner area. The outer area extends from a rotating edge of the semiconductor wafer to the inner area. The inner area and the outer area are formed from the single piece semiconductor material. A step forms a transition from the outer area to the inner area. The outer area is thicker than the inner area. The semiconductor wafer useful for the production of electronic components, comprises inner area (2) arranged in the middle of the wafer, outer area (3), and first surface (4), which is formed of a semiconductor element in the inner area. The outer area extends from a rotating edge of the semiconductor wafer to the inner area. The inner area and the outer area are formed from the single piece semiconductor material. A step forms a transition from the outer area to the inner area. The outer area is thicker than the inner area and in comparison to the inner area occupies small portion of the semiconductor wafer. At the first surface a semiconductor element in the inner area is formed. An independent claim is included for a method for the production of semiconductor wafer.
Eine Halbleiterscheibe aus einem Halbleitermaterial weist auf einen inneren Bereich um die Mittel der Halbleiterscheibe herum und einen äußeren Bereich. Der äußere Bereich erstreckt sich, ausgehend von einem umlaufenden Rand der Halbleiterscheibe, bis zum inneren Bereich. Der äußere Bereich ist im Vergleich zum inneren Bereich dicker. Der innere Bereich und der äußere Bereich sind einstückig aus dem Halbleitermaterial ausgebildet.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjrtOxEAMRdNQIOAf3NAFKQHxaBEsood-NZrxbCxl7Mie0X4uv4ITLUJ0NH773nPefX1goSicWqyicAwZFZphbjNkH9QJYVFZ1yQMkgFnjFWFKUKUsggjV-u3WsnQgJhdIygGDxr4gMlnm1KhlGZcVdZuM-tBWj3d9xA4QYBMahWsaQ4RezhOFCcgW4GKi_l7APvD7VDFOX58fhEuu7McZsOrU77ort92ny_vN7jIHm1xA8a6f92Nw-0wPAzj_ePT-Dze_ffuGza8bS0</recordid><startdate>20071011</startdate><enddate>20071011</enddate><creator>LACKNER, GERALD</creator><creator>SANTOS RODRIGUEZ, FRANCISCO JAVIER</creator><creator>FATHULLA, AHMAD</creator><creator>GROMMES, WALTHER</creator><scope>EVB</scope></search><sort><creationdate>20071011</creationdate><title>Semiconductor wafer useful for the production of electronic components, comprises inner area arranged in the middle of the wafer, outer area, and a first surface, which is formed of a semiconductor element in the inner area</title><author>LACKNER, GERALD ; SANTOS RODRIGUEZ, FRANCISCO JAVIER ; FATHULLA, AHMAD ; GROMMES, WALTHER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE102006015781A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; ger</language><creationdate>2007</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>LACKNER, GERALD</creatorcontrib><creatorcontrib>SANTOS RODRIGUEZ, FRANCISCO JAVIER</creatorcontrib><creatorcontrib>FATHULLA, AHMAD</creatorcontrib><creatorcontrib>GROMMES, WALTHER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LACKNER, GERALD</au><au>SANTOS RODRIGUEZ, FRANCISCO JAVIER</au><au>FATHULLA, AHMAD</au><au>GROMMES, WALTHER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor wafer useful for the production of electronic components, comprises inner area arranged in the middle of the wafer, outer area, and a first surface, which is formed of a semiconductor element in the inner area</title><date>2007-10-11</date><risdate>2007</risdate><abstract>The semiconductor wafer useful for the production of electronic components, comprises inner area (2) arranged in the middle of the wafer, outer area (3), and first surface (4), which is formed of a semiconductor element in the inner area. The outer area extends from a rotating edge of the semiconductor wafer to the inner area. The inner area and the outer area are formed from the single piece semiconductor material. A step forms a transition from the outer area to the inner area. The outer area is thicker than the inner area. The semiconductor wafer useful for the production of electronic components, comprises inner area (2) arranged in the middle of the wafer, outer area (3), and first surface (4), which is formed of a semiconductor element in the inner area. The outer area extends from a rotating edge of the semiconductor wafer to the inner area. The inner area and the outer area are formed from the single piece semiconductor material. A step forms a transition from the outer area to the inner area. The outer area is thicker than the inner area and in comparison to the inner area occupies small portion of the semiconductor wafer. At the first surface a semiconductor element in the inner area is formed. An independent claim is included for a method for the production of semiconductor wafer.
Eine Halbleiterscheibe aus einem Halbleitermaterial weist auf einen inneren Bereich um die Mittel der Halbleiterscheibe herum und einen äußeren Bereich. Der äußere Bereich erstreckt sich, ausgehend von einem umlaufenden Rand der Halbleiterscheibe, bis zum inneren Bereich. Der äußere Bereich ist im Vergleich zum inneren Bereich dicker. Der innere Bereich und der äußere Bereich sind einstückig aus dem Halbleitermaterial ausgebildet.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Semiconductor wafer useful for the production of electronic components, comprises inner area arranged in the middle of the wafer, outer area, and a first surface, which is formed of a semiconductor element in the inner area |
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