Verfahren mit selbstausgerichteter Maske zum Verringern der Zellenlayoutfläche
Self-aligning vias and trenches etched between adjacent lines of metallization allows the area of the dielectric substrate allocated to the via or trench to be significantly reduced without increasing the possibility of electrical shorts to the adjacent lines of metallization.
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| Format: | Patent |
| Sprache: | ger |
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| Zusammenfassung: | Self-aligning vias and trenches etched between adjacent lines of metallization allows the area of the dielectric substrate allocated to the via or trench to be significantly reduced without increasing the possibility of electrical shorts to the adjacent lines of metallization. |
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