Verfahren zur Herstellung eines Bauelementträgers geringer Bauhöhe
Verfahren zur Herstellung eines mit zumindest einem piezoelektrischen Bauelement bestückten Bauelementträgers geringer Bauhöhe mit den Schritten: - Auflöten eines Bauelements mit einem piezoelektrischen Substrat (S) auf einen Bauelementträger (BT) in Flip Chip Montagetechnik, so daß die Bauelement-S...
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creator | KRUEGER, HANS PAHL, WOLFGANG SELMEIER, PETER |
description | Verfahren zur Herstellung eines mit zumindest einem piezoelektrischen Bauelement bestückten Bauelementträgers geringer Bauhöhe mit den Schritten: - Auflöten eines Bauelements mit einem piezoelektrischen Substrat (S) auf einen Bauelementträger (BT) in Flip Chip Montagetechnik, so daß die Bauelement-Strukturen (BS) auf der zum Bauelementträger weisenden Substratoberfläche angeordnet sind - Abtragen von Substratmaterial von der dem Bauelementträger abgewandten Oberfläche, bis eine gewünschte reduzierte Substratschichtdicke erreicht ist.
Production of a component support having a piezoelectric component comprises: (a) soldering a component with a piezoelectric substrate (S) onto a component support (BT) in a flip chip assembly; and (b) removing the substrate material from the surface facing away from the component support until the required reduced substrate layer thickness is reached. Production of a component support having a piezoelectric component comprises: (a) soldering a component with a piezoelectric substrate (S) onto a component support (BT) in a flip chip assembly so that the component structures are arranged on the substrate surface facing the component support; and (b) removing the substrate material from the surface facing away from the component support until the required reduced substrate layer thickness is reached. Preferably the region between the lower edges of the substrate and the component support is filled with an elastic plastic composition after soldering the component and before removing the substrate material. The component is reduced up to a thickness of less than 300 microns . |
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Production of a component support having a piezoelectric component comprises: (a) soldering a component with a piezoelectric substrate (S) onto a component support (BT) in a flip chip assembly; and (b) removing the substrate material from the surface facing away from the component support until the required reduced substrate layer thickness is reached. Production of a component support having a piezoelectric component comprises: (a) soldering a component with a piezoelectric substrate (S) onto a component support (BT) in a flip chip assembly so that the component structures are arranged on the substrate surface facing the component support; and (b) removing the substrate material from the surface facing away from the component support until the required reduced substrate layer thickness is reached. Preferably the region between the lower edges of the substrate and the component support is filled with an elastic plastic composition after soldering the component and before removing the substrate material. The component is reduced up to a thickness of less than 300 microns .</description><language>ger</language><subject>ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL ; BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GRINDING ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; PERFORMING OPERATIONS ; POLISHING ; RESONATORS ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110811&DB=EPODOC&CC=DE&NR=10147877B4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110811&DB=EPODOC&CC=DE&NR=10147877B4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KRUEGER, HANS</creatorcontrib><creatorcontrib>PAHL, WOLFGANG</creatorcontrib><creatorcontrib>SELMEIER, PETER</creatorcontrib><title>Verfahren zur Herstellung eines Bauelementträgers geringer Bauhöhe</title><description>Verfahren zur Herstellung eines mit zumindest einem piezoelektrischen Bauelement bestückten Bauelementträgers geringer Bauhöhe mit den Schritten: - Auflöten eines Bauelements mit einem piezoelektrischen Substrat (S) auf einen Bauelementträger (BT) in Flip Chip Montagetechnik, so daß die Bauelement-Strukturen (BS) auf der zum Bauelementträger weisenden Substratoberfläche angeordnet sind - Abtragen von Substratmaterial von der dem Bauelementträger abgewandten Oberfläche, bis eine gewünschte reduzierte Substratschichtdicke erreicht ist.
Production of a component support having a piezoelectric component comprises: (a) soldering a component with a piezoelectric substrate (S) onto a component support (BT) in a flip chip assembly; and (b) removing the substrate material from the surface facing away from the component support until the required reduced substrate layer thickness is reached. Production of a component support having a piezoelectric component comprises: (a) soldering a component with a piezoelectric substrate (S) onto a component support (BT) in a flip chip assembly so that the component structures are arranged on the substrate surface facing the component support; and (b) removing the substrate material from the surface facing away from the component support until the required reduced substrate layer thickness is reached. Preferably the region between the lower edges of the substrate and the component support is filled with an elastic plastic composition after soldering the component and before removing the substrate material. The component is reduced up to a thickness of less than 300 microns .</description><subject>ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GRINDING</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHING</subject><subject>RESONATORS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAJSy1KS8woSs1TqCotUvBILSouSc3JKc1LV0jNzEstVnBKLE3NSc1NzSspKTq8JB0orwAkMvOABEgu4_C2jFQeBta0xJziVF4ozc2g6OYa4uyhm1qQH59aXJCYnJqXWhLv4mpoYGhibmFu7mRiTIwaAH3NNKc</recordid><startdate>20110811</startdate><enddate>20110811</enddate><creator>KRUEGER, HANS</creator><creator>PAHL, WOLFGANG</creator><creator>SELMEIER, PETER</creator><scope>EVB</scope></search><sort><creationdate>20110811</creationdate><title>Verfahren zur Herstellung eines Bauelementträgers geringer Bauhöhe</title><author>KRUEGER, HANS ; PAHL, WOLFGANG ; SELMEIER, PETER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE10147877B43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>2011</creationdate><topic>ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GRINDING</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHING</topic><topic>RESONATORS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>KRUEGER, HANS</creatorcontrib><creatorcontrib>PAHL, WOLFGANG</creatorcontrib><creatorcontrib>SELMEIER, PETER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KRUEGER, HANS</au><au>PAHL, WOLFGANG</au><au>SELMEIER, PETER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Verfahren zur Herstellung eines Bauelementträgers geringer Bauhöhe</title><date>2011-08-11</date><risdate>2011</risdate><abstract>Verfahren zur Herstellung eines mit zumindest einem piezoelektrischen Bauelement bestückten Bauelementträgers geringer Bauhöhe mit den Schritten: - Auflöten eines Bauelements mit einem piezoelektrischen Substrat (S) auf einen Bauelementträger (BT) in Flip Chip Montagetechnik, so daß die Bauelement-Strukturen (BS) auf der zum Bauelementträger weisenden Substratoberfläche angeordnet sind - Abtragen von Substratmaterial von der dem Bauelementträger abgewandten Oberfläche, bis eine gewünschte reduzierte Substratschichtdicke erreicht ist.
Production of a component support having a piezoelectric component comprises: (a) soldering a component with a piezoelectric substrate (S) onto a component support (BT) in a flip chip assembly; and (b) removing the substrate material from the surface facing away from the component support until the required reduced substrate layer thickness is reached. Production of a component support having a piezoelectric component comprises: (a) soldering a component with a piezoelectric substrate (S) onto a component support (BT) in a flip chip assembly so that the component structures are arranged on the substrate surface facing the component support; and (b) removing the substrate material from the surface facing away from the component support until the required reduced substrate layer thickness is reached. Preferably the region between the lower edges of the substrate and the component support is filled with an elastic plastic composition after soldering the component and before removing the substrate material. The component is reduced up to a thickness of less than 300 microns .</abstract><oa>free_for_read</oa></addata></record> |
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subjects | ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GRINDING IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS PERFORMING OPERATIONS POLISHING RESONATORS SEMICONDUCTOR DEVICES TRANSPORTING |
title | Verfahren zur Herstellung eines Bauelementträgers geringer Bauhöhe |
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