Indium aluminum gallium nitride light-emitting device such as surface or edge emitting laser comprises host substrate, light-emitting structure, device contacts and wafer bonding layer between substrate and light-emitting structure

Indium aluminum gallium nitride light-emitting device comprises: a host substrate; a light-emitting structure including device layers of a first and second polarity near the top of the substrate; first device contact on top of the light-emitting structure; wafer bonding layer between substrate and l...

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Bibliographische Detailangaben

Hauptverfasser:	KRAMES, MICHAEL R, MARTIN, PAUL S, KISH JUN., FRED A, CARTER COMAN, CARRIE
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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