Indium aluminum gallium nitride light-emitting device such as surface or edge emitting laser comprises host substrate, light-emitting structure, device contacts and wafer bonding layer between substrate and light-emitting structure
Indium aluminum gallium nitride light-emitting device comprises: a host substrate; a light-emitting structure including device layers of a first and second polarity near the top of the substrate; first device contact on top of the light-emitting structure; wafer bonding layer between substrate and l...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | KRAMES, MICHAEL R MARTIN, PAUL S KISH JUN., FRED A CARTER COMAN, CARRIE |
| description | Indium aluminum gallium nitride light-emitting device comprises: a host substrate; a light-emitting structure including device layers of a first and second polarity near the top of the substrate; first device contact on top of the light-emitting structure; wafer bonding layer between substrate and light emitting structure; and a second device contact on the bottom of light-emitting structure. An indium aluminum gallium nitride (InAlGaN) light-emitting device comprises: a host substrate (12); an indium aluminum gallium nitride (InAlGaN) light-emitting structure (20), including device layers of a first and second polarity (20a, 20b), near the top of the substrate; a first device contact (22) on top of the InAlGaN light-emitting structure; a wafer bonding layer (16) between the host substrate and the InAlGaN structure; and a second device contact (18), positioned within or adjacent to the wafer bonding layer, electrically connected to the bottom of the InAlGaN light-emitting structure. An independent claim is also included for a method of forming a vertical conducting InAlGaN light-emitting device.
Bauelemente und Verfahren zum Herstellen von lichtemittierenden InAlGaN-Bauelementen werden beschrieben, die sich aus der Entfernung von lichtemittierenden Schichten von dem Saphirwachstumssubstrat ergeben. Bei mehreren Ausführungsbeispielen werden Techniken zum Herstellen einer lichtemittierenden vertikalen InAlGaN-Diodenstruktur beschrieben, die eine verbesserte Leistungsfähigkeit und/oder eine verbesserte Kosteneffektivität ergibt. Darüber hinaus werden eine Metallverbindungs-, Substratabhebe- und eine neuartige RIE-Bauelementtrennungstechnik verwendet, um vertikale GaN-LEDs auf einem Substrat effektiv zu erzeugen, das wegen seiner thermischen Leitfähigkeit und seiner Vereinfachung der Herstellung ausgewählt ist. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_DE10000088A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>DE10000088A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_DE10000088A13</originalsourceid><addsrcrecordid>eNqNj89qAkEMxvfSg9S-Q7wrKL14Ff9Q794lzmR3A7MzyySj9In7GmZFKgiCuSRf8vFLMqr-9tFz6QBD6Tha0WAIQyOyZvYEgZtWZ9SxKscGPJ3ZEUhxLaBYzjWaThnINwT_voBCGVzq-sxCAm0SNfdJNKPS9Blr7eK0ZJvcN7gUFZ0KYPRwwdpop2S33ti_gyK9EMUH9OZ8xR1XHzUGoa97_qwmu-1h_TOjPh1Jensikh4328V8iOVytfh-x3MFFg5xQw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Indium aluminum gallium nitride light-emitting device such as surface or edge emitting laser comprises host substrate, light-emitting structure, device contacts and wafer bonding layer between substrate and light-emitting structure</title><source>esp@cenet</source><creator>KRAMES, MICHAEL R ; MARTIN, PAUL S ; KISH JUN., FRED A ; CARTER COMAN, CARRIE</creator><creatorcontrib>KRAMES, MICHAEL R ; MARTIN, PAUL S ; KISH JUN., FRED A ; CARTER COMAN, CARRIE</creatorcontrib><description>Indium aluminum gallium nitride light-emitting device comprises: a host substrate; a light-emitting structure including device layers of a first and second polarity near the top of the substrate; first device contact on top of the light-emitting structure; wafer bonding layer between substrate and light emitting structure; and a second device contact on the bottom of light-emitting structure. An indium aluminum gallium nitride (InAlGaN) light-emitting device comprises: a host substrate (12); an indium aluminum gallium nitride (InAlGaN) light-emitting structure (20), including device layers of a first and second polarity (20a, 20b), near the top of the substrate; a first device contact (22) on top of the InAlGaN light-emitting structure; a wafer bonding layer (16) between the host substrate and the InAlGaN structure; and a second device contact (18), positioned within or adjacent to the wafer bonding layer, electrically connected to the bottom of the InAlGaN light-emitting structure. An independent claim is also included for a method of forming a vertical conducting InAlGaN light-emitting device.
Bauelemente und Verfahren zum Herstellen von lichtemittierenden InAlGaN-Bauelementen werden beschrieben, die sich aus der Entfernung von lichtemittierenden Schichten von dem Saphirwachstumssubstrat ergeben. Bei mehreren Ausführungsbeispielen werden Techniken zum Herstellen einer lichtemittierenden vertikalen InAlGaN-Diodenstruktur beschrieben, die eine verbesserte Leistungsfähigkeit und/oder eine verbesserte Kosteneffektivität ergibt. Darüber hinaus werden eine Metallverbindungs-, Substratabhebe- und eine neuartige RIE-Bauelementtrennungstechnik verwendet, um vertikale GaN-LEDs auf einem Substrat effektiv zu erzeugen, das wegen seiner thermischen Leitfähigkeit und seiner Vereinfachung der Herstellung ausgewählt ist.</description><edition>7</edition><language>eng ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000817&DB=EPODOC&CC=DE&NR=10000088A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000817&DB=EPODOC&CC=DE&NR=10000088A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KRAMES, MICHAEL R</creatorcontrib><creatorcontrib>MARTIN, PAUL S</creatorcontrib><creatorcontrib>KISH JUN., FRED A</creatorcontrib><creatorcontrib>CARTER COMAN, CARRIE</creatorcontrib><title>Indium aluminum gallium nitride light-emitting device such as surface or edge emitting laser comprises host substrate, light-emitting structure, device contacts and wafer bonding layer between substrate and light-emitting structure</title><description>Indium aluminum gallium nitride light-emitting device comprises: a host substrate; a light-emitting structure including device layers of a first and second polarity near the top of the substrate; first device contact on top of the light-emitting structure; wafer bonding layer between substrate and light emitting structure; and a second device contact on the bottom of light-emitting structure. An indium aluminum gallium nitride (InAlGaN) light-emitting device comprises: a host substrate (12); an indium aluminum gallium nitride (InAlGaN) light-emitting structure (20), including device layers of a first and second polarity (20a, 20b), near the top of the substrate; a first device contact (22) on top of the InAlGaN light-emitting structure; a wafer bonding layer (16) between the host substrate and the InAlGaN structure; and a second device contact (18), positioned within or adjacent to the wafer bonding layer, electrically connected to the bottom of the InAlGaN light-emitting structure. An independent claim is also included for a method of forming a vertical conducting InAlGaN light-emitting device.
Bauelemente und Verfahren zum Herstellen von lichtemittierenden InAlGaN-Bauelementen werden beschrieben, die sich aus der Entfernung von lichtemittierenden Schichten von dem Saphirwachstumssubstrat ergeben. Bei mehreren Ausführungsbeispielen werden Techniken zum Herstellen einer lichtemittierenden vertikalen InAlGaN-Diodenstruktur beschrieben, die eine verbesserte Leistungsfähigkeit und/oder eine verbesserte Kosteneffektivität ergibt. Darüber hinaus werden eine Metallverbindungs-, Substratabhebe- und eine neuartige RIE-Bauelementtrennungstechnik verwendet, um vertikale GaN-LEDs auf einem Substrat effektiv zu erzeugen, das wegen seiner thermischen Leitfähigkeit und seiner Vereinfachung der Herstellung ausgewählt ist.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNj89qAkEMxvfSg9S-Q7wrKL14Ff9Q794lzmR3A7MzyySj9In7GmZFKgiCuSRf8vFLMqr-9tFz6QBD6Tha0WAIQyOyZvYEgZtWZ9SxKscGPJ3ZEUhxLaBYzjWaThnINwT_voBCGVzq-sxCAm0SNfdJNKPS9Blr7eK0ZJvcN7gUFZ0KYPRwwdpop2S33ti_gyK9EMUH9OZ8xR1XHzUGoa97_qwmu-1h_TOjPh1Jensikh4328V8iOVytfh-x3MFFg5xQw</recordid><startdate>20000817</startdate><enddate>20000817</enddate><creator>KRAMES, MICHAEL R</creator><creator>MARTIN, PAUL S</creator><creator>KISH JUN., FRED A</creator><creator>CARTER COMAN, CARRIE</creator><scope>EVB</scope></search><sort><creationdate>20000817</creationdate><title>Indium aluminum gallium nitride light-emitting device such as surface or edge emitting laser comprises host substrate, light-emitting structure, device contacts and wafer bonding layer between substrate and light-emitting structure</title><author>KRAMES, MICHAEL R ; MARTIN, PAUL S ; KISH JUN., FRED A ; CARTER COMAN, CARRIE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE10000088A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; ger</language><creationdate>2000</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KRAMES, MICHAEL R</creatorcontrib><creatorcontrib>MARTIN, PAUL S</creatorcontrib><creatorcontrib>KISH JUN., FRED A</creatorcontrib><creatorcontrib>CARTER COMAN, CARRIE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KRAMES, MICHAEL R</au><au>MARTIN, PAUL S</au><au>KISH JUN., FRED A</au><au>CARTER COMAN, CARRIE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Indium aluminum gallium nitride light-emitting device such as surface or edge emitting laser comprises host substrate, light-emitting structure, device contacts and wafer bonding layer between substrate and light-emitting structure</title><date>2000-08-17</date><risdate>2000</risdate><abstract>Indium aluminum gallium nitride light-emitting device comprises: a host substrate; a light-emitting structure including device layers of a first and second polarity near the top of the substrate; first device contact on top of the light-emitting structure; wafer bonding layer between substrate and light emitting structure; and a second device contact on the bottom of light-emitting structure. An indium aluminum gallium nitride (InAlGaN) light-emitting device comprises: a host substrate (12); an indium aluminum gallium nitride (InAlGaN) light-emitting structure (20), including device layers of a first and second polarity (20a, 20b), near the top of the substrate; a first device contact (22) on top of the InAlGaN light-emitting structure; a wafer bonding layer (16) between the host substrate and the InAlGaN structure; and a second device contact (18), positioned within or adjacent to the wafer bonding layer, electrically connected to the bottom of the InAlGaN light-emitting structure. An independent claim is also included for a method of forming a vertical conducting InAlGaN light-emitting device.
Bauelemente und Verfahren zum Herstellen von lichtemittierenden InAlGaN-Bauelementen werden beschrieben, die sich aus der Entfernung von lichtemittierenden Schichten von dem Saphirwachstumssubstrat ergeben. Bei mehreren Ausführungsbeispielen werden Techniken zum Herstellen einer lichtemittierenden vertikalen InAlGaN-Diodenstruktur beschrieben, die eine verbesserte Leistungsfähigkeit und/oder eine verbesserte Kosteneffektivität ergibt. Darüber hinaus werden eine Metallverbindungs-, Substratabhebe- und eine neuartige RIE-Bauelementtrennungstechnik verwendet, um vertikale GaN-LEDs auf einem Substrat effektiv zu erzeugen, das wegen seiner thermischen Leitfähigkeit und seiner Vereinfachung der Herstellung ausgewählt ist.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; ger |
| recordid | cdi_epo_espacenet_DE10000088A1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Indium aluminum gallium nitride light-emitting device such as surface or edge emitting laser comprises host substrate, light-emitting structure, device contacts and wafer bonding layer between substrate and light-emitting structure |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T18%3A30%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KRAMES,%20MICHAEL%20R&rft.date=2000-08-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EDE10000088A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |