Indium aluminum gallium nitride light-emitting device such as surface or edge emitting laser comprises host substrate, light-emitting structure, device contacts and wafer bonding layer between substrate and light-emitting structure

Indium aluminum gallium nitride light-emitting device such as surface or edge emitting laser comprises host substrate, light-emitting structure, device contacts and wafer bonding layer between substrate and light-emitting structure

Indium aluminum gallium nitride light-emitting device comprises: a host substrate; a light-emitting structure including device layers of a first and second polarity near the top of the substrate; first device contact on top of the light-emitting structure; wafer bonding layer between substrate and l...

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Bibliographische Detailangaben
Hauptverfasser: KRAMES, MICHAEL R, MARTIN, PAUL S, KISH JUN., FRED A, CARTER COMAN, CARRIE
Format: Patent
Sprache:eng ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Indium aluminum gallium nitride light-emitting device comprises: a host substrate; a light-emitting structure including device layers of a first and second polarity near the top of the substrate; first device contact on top of the light-emitting structure; wafer bonding layer between substrate and light emitting structure; and a second device contact on the bottom of light-emitting structure. An indium aluminum gallium nitride (InAlGaN) light-emitting device comprises: a host substrate (12); an indium aluminum gallium nitride (InAlGaN) light-emitting structure (20), including device layers of a first and second polarity (20a, 20b), near the top of the substrate; a first device contact (22) on top of the InAlGaN light-emitting structure; a wafer bonding layer (16) between the host substrate and the InAlGaN structure; and a second device contact (18), positioned within or adjacent to the wafer bonding layer, electrically connected to the bottom of the InAlGaN light-emitting structure. An independent claim is also included for a method of forming a vertical conducting InAlGaN light-emitting device. Bauelemente und Verfahren zum Herstellen von lichtemittierenden InAlGaN-Bauelementen werden beschrieben, die sich aus der Entfernung von lichtemittierenden Schichten von dem Saphirwachstumssubstrat ergeben. Bei mehreren Ausführungsbeispielen werden Techniken zum Herstellen einer lichtemittierenden vertikalen InAlGaN-Diodenstruktur beschrieben, die eine verbesserte Leistungsfähigkeit und/oder eine verbesserte Kosteneffektivität ergibt. Darüber hinaus werden eine Metallverbindungs-, Substratabhebe- und eine neuartige RIE-Bauelementtrennungstechnik verwendet, um vertikale GaN-LEDs auf einem Substrat effektiv zu erzeugen, das wegen seiner thermischen Leitfähigkeit und seiner Vereinfachung der Herstellung ausgewählt ist.