A method and a device for preparing a bulky gallium-containing nitride monocrystal
The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent....
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| creator | Sierzputowski Leszek Piotr Dwilinski Robert Tomasz Doradzinski Roman Marek Garczynski Jerzy Kanbara Yasuo |
| description | The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CZ306997B6</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CZ306997B6</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CZ306997B63</originalsourceid><addsrcrecordid>eNrjZAhyVMhNLcnIT1FIzANihZTUsszkVIW0_CKFgqLUgsSizLx0oHBSaU52pUJ6Yk5OZmmubnJ-XkliZh5IKi-zpCgzJVUhNz8vP7mosrgkMYeHgTUtMac4lRdKczPIu7mGOHvophbkx6cWFyQmp-allsQ7RxkbmFlamjuZGRNWAQABiDdI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>A method and a device for preparing a bulky gallium-containing nitride monocrystal</title><source>esp@cenet</source><creator>Sierzputowski Leszek Piotr ; Dwilinski Robert Tomasz ; Doradzinski Roman Marek ; Garczynski Jerzy ; Kanbara Yasuo</creator><creatorcontrib>Sierzputowski Leszek Piotr ; Dwilinski Robert Tomasz ; Doradzinski Roman Marek ; Garczynski Jerzy ; Kanbara Yasuo</creatorcontrib><description>The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.</description><language>cze ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ; CRYSTAL GROWTH ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY ; INORGANIC CHEMISTRY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171108&DB=EPODOC&CC=CZ&NR=306997B6$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171108&DB=EPODOC&CC=CZ&NR=306997B6$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Sierzputowski Leszek Piotr</creatorcontrib><creatorcontrib>Dwilinski Robert Tomasz</creatorcontrib><creatorcontrib>Doradzinski Roman Marek</creatorcontrib><creatorcontrib>Garczynski Jerzy</creatorcontrib><creatorcontrib>Kanbara Yasuo</creatorcontrib><title>A method and a device for preparing a bulky gallium-containing nitride monocrystal</title><description>The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</subject><subject>CRYSTAL GROWTH</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAhyVMhNLcnIT1FIzANihZTUsszkVIW0_CKFgqLUgsSizLx0oHBSaU52pUJ6Yk5OZmmubnJ-XkliZh5IKi-zpCgzJVUhNz8vP7mosrgkMYeHgTUtMac4lRdKczPIu7mGOHvophbkx6cWFyQmp-allsQ7RxkbmFlamjuZGRNWAQABiDdI</recordid><startdate>20171108</startdate><enddate>20171108</enddate><creator>Sierzputowski Leszek Piotr</creator><creator>Dwilinski Robert Tomasz</creator><creator>Doradzinski Roman Marek</creator><creator>Garczynski Jerzy</creator><creator>Kanbara Yasuo</creator><scope>EVB</scope></search><sort><creationdate>20171108</creationdate><title>A method and a device for preparing a bulky gallium-containing nitride monocrystal</title><author>Sierzputowski Leszek Piotr ; Dwilinski Robert Tomasz ; Doradzinski Roman Marek ; Garczynski Jerzy ; Kanbara Yasuo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CZ306997B63</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>cze ; eng</language><creationdate>2017</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</topic><topic>CRYSTAL GROWTH</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>Sierzputowski Leszek Piotr</creatorcontrib><creatorcontrib>Dwilinski Robert Tomasz</creatorcontrib><creatorcontrib>Doradzinski Roman Marek</creatorcontrib><creatorcontrib>Garczynski Jerzy</creatorcontrib><creatorcontrib>Kanbara Yasuo</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sierzputowski Leszek Piotr</au><au>Dwilinski Robert Tomasz</au><au>Doradzinski Roman Marek</au><au>Garczynski Jerzy</au><au>Kanbara Yasuo</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>A method and a device for preparing a bulky gallium-containing nitride monocrystal</title><date>2017-11-08</date><risdate>2017</risdate><abstract>The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CRYSTAL GROWTH DEVICES USING STIMULATED EMISSION ELECTRICITY INORGANIC CHEMISTRY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | A method and a device for preparing a bulky gallium-containing nitride monocrystal |
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