Doping frit suitable for producing electrically-conducting ceramic enamels, process for producing thereof, method of obtaining vitrifiable anti-electrostatic enamel and ceramic product
Dotovací frita, vhodná pro výrobu vodivých keramických smaltu, je složena ze 45 až 65 % hmotnostních SiO.sub.2.n. vzhledem k celku, a 55 až 35 % hmotnostních smesi oxidu, pricemž obsahuje alespon oxid dvojmocného prvku v pomeru hmotnostním, ležícím mezi 3 a 35 % hmotnostními, alespon oxid trojmocnéh...
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creator | NEBOT APARICI ANTONIO CARDA CASTELLO JUAN B |
description | Dotovací frita, vhodná pro výrobu vodivých keramických smaltu, je složena ze 45 až 65 % hmotnostních SiO.sub.2.n. vzhledem k celku, a 55 až 35 % hmotnostních smesi oxidu, pricemž obsahuje alespon oxid dvojmocného prvku v pomeru hmotnostním, ležícím mezi 3 a 35 % hmotnostními, alespon oxid trojmocného prvku v pomeru hmotnostním, ležícím mezi 3 a 25 % hmotnostními, a oxid dotovacího prvku, vybraný ze skupiny, kterou tvorí Li.sub.2.n.O, CuO, Sb.sub.2.n.O.sub.3.n., Sb.sub.2.n.O.sub.5.n., Bi.sub.2.n.O.sub.3.n., V.sub.2.n.O.sub.3.n., V.sub.2.n.O.sub.5.n. a jejich smesi, v pomeru hmotnostním, ležícím mezi 0,1 a 5 %. Vynález se rovnež týká zpusobu výroby této dotovací frity, zpusob získávání zeskelnovatelného antielektrostatického smaltu a príslušného keramického výrobku.
In the present invention, there is disclosed a doping frit suitable for producing electrically-conducting ceramic enamels containing 45 to 65 percent by weight of SiOi2 based on the doping frit total weight, and 55 to 35 percent by weight of a mixture of oxides that comprises: at least, an oxide of a divalent element, in a proportion, by weight, lying between 3 and 35 percent by weight; at least, an oxide of a trivalent element in a proportion, by weight, lying between 3 and 25 percent by weight; and an oxide of a doping element being selected from the group consisting of Lii2O, CuO, Sbi2Oi3, Sbi2Oi5, Bii2Oi3, Vi2Oi3, Vi2Oi5, and mixtures thereof, in a proportion, by weight, lying between 0.1 and 5 percent by weight. There is also disclosed a process for preparing the above-described doping frit, further a method of obtaining vitrifiable anti-electrostatic enamel and a corresponding ceramic product. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CZ300248B6</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CZ300248B6</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CZ300248B63</originalsourceid><addsrcrecordid>eNqFjTEOgkAQRWksjHoG9wCQEDHGWtR4ACsbMiyzMsmyQ3YHE2_m8QQxFDZWk_w__7159DpyS-6ujCdRoSOB0qIy7FXruer00KFFLZ40WPtMNLs-liHX6KEhrdBBgzbEw0RjCD9zqdEjm1g1KDVXio3iUoDcUD6oJxv6WMEJJaOMg4BM6L6pJtsIlmU0M2ADrr53Ea3Pp2t-SbDlAkMLGh1Kkd-yNN1s94dd9v_jDdyJXrY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Doping frit suitable for producing electrically-conducting ceramic enamels, process for producing thereof, method of obtaining vitrifiable anti-electrostatic enamel and ceramic product</title><source>esp@cenet</source><creator>NEBOT APARICI ANTONIO ; CARDA CASTELLO JUAN B</creator><creatorcontrib>NEBOT APARICI ANTONIO ; CARDA CASTELLO JUAN B</creatorcontrib><description>Dotovací frita, vhodná pro výrobu vodivých keramických smaltu, je složena ze 45 až 65 % hmotnostních SiO.sub.2.n. vzhledem k celku, a 55 až 35 % hmotnostních smesi oxidu, pricemž obsahuje alespon oxid dvojmocného prvku v pomeru hmotnostním, ležícím mezi 3 a 35 % hmotnostními, alespon oxid trojmocného prvku v pomeru hmotnostním, ležícím mezi 3 a 25 % hmotnostními, a oxid dotovacího prvku, vybraný ze skupiny, kterou tvorí Li.sub.2.n.O, CuO, Sb.sub.2.n.O.sub.3.n., Sb.sub.2.n.O.sub.5.n., Bi.sub.2.n.O.sub.3.n., V.sub.2.n.O.sub.3.n., V.sub.2.n.O.sub.5.n. a jejich smesi, v pomeru hmotnostním, ležícím mezi 0,1 a 5 %. Vynález se rovnež týká zpusobu výroby této dotovací frity, zpusob získávání zeskelnovatelného antielektrostatického smaltu a príslušného keramického výrobku.
In the present invention, there is disclosed a doping frit suitable for producing electrically-conducting ceramic enamels containing 45 to 65 percent by weight of SiOi2 based on the doping frit total weight, and 55 to 35 percent by weight of a mixture of oxides that comprises: at least, an oxide of a divalent element, in a proportion, by weight, lying between 3 and 35 percent by weight; at least, an oxide of a trivalent element in a proportion, by weight, lying between 3 and 25 percent by weight; and an oxide of a doping element being selected from the group consisting of Lii2O, CuO, Sbi2Oi3, Sbi2Oi5, Bii2Oi3, Vi2Oi3, Vi2Oi5, and mixtures thereof, in a proportion, by weight, lying between 0.1 and 5 percent by weight. There is also disclosed a process for preparing the above-described doping frit, further a method of obtaining vitrifiable anti-electrostatic enamel and a corresponding ceramic product.</description><language>cze ; eng</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CABLES ; CEMENTS ; CERAMICS ; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; CONDUCTORS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GLASS ; INSULATORS ; JOINING GLASS TO GLASS OR OTHER MATERIALS ; LIME, MAGNESIA ; METALLURGY ; MINERAL OR SLAG WOOL ; NATURALLY-OCCURRING ELECTRICITY ; REFRACTORIES ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; SEMICONDUCTOR DEVICES ; SLAG ; STATIC ELECTRICITY ; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS ; SURFACE TREATMENT OF GLASS ; TREATMENT OF NATURAL STONE</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090401&DB=EPODOC&CC=CZ&NR=300248B6$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090401&DB=EPODOC&CC=CZ&NR=300248B6$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NEBOT APARICI ANTONIO</creatorcontrib><creatorcontrib>CARDA CASTELLO JUAN B</creatorcontrib><title>Doping frit suitable for producing electrically-conducting ceramic enamels, process for producing thereof, method of obtaining vitrifiable anti-electrostatic enamel and ceramic product</title><description>Dotovací frita, vhodná pro výrobu vodivých keramických smaltu, je složena ze 45 až 65 % hmotnostních SiO.sub.2.n. vzhledem k celku, a 55 až 35 % hmotnostních smesi oxidu, pricemž obsahuje alespon oxid dvojmocného prvku v pomeru hmotnostním, ležícím mezi 3 a 35 % hmotnostními, alespon oxid trojmocného prvku v pomeru hmotnostním, ležícím mezi 3 a 25 % hmotnostními, a oxid dotovacího prvku, vybraný ze skupiny, kterou tvorí Li.sub.2.n.O, CuO, Sb.sub.2.n.O.sub.3.n., Sb.sub.2.n.O.sub.5.n., Bi.sub.2.n.O.sub.3.n., V.sub.2.n.O.sub.3.n., V.sub.2.n.O.sub.5.n. a jejich smesi, v pomeru hmotnostním, ležícím mezi 0,1 a 5 %. Vynález se rovnež týká zpusobu výroby této dotovací frity, zpusob získávání zeskelnovatelného antielektrostatického smaltu a príslušného keramického výrobku.
In the present invention, there is disclosed a doping frit suitable for producing electrically-conducting ceramic enamels containing 45 to 65 percent by weight of SiOi2 based on the doping frit total weight, and 55 to 35 percent by weight of a mixture of oxides that comprises: at least, an oxide of a divalent element, in a proportion, by weight, lying between 3 and 35 percent by weight; at least, an oxide of a trivalent element in a proportion, by weight, lying between 3 and 25 percent by weight; and an oxide of a doping element being selected from the group consisting of Lii2O, CuO, Sbi2Oi3, Sbi2Oi5, Bii2Oi3, Vi2Oi3, Vi2Oi5, and mixtures thereof, in a proportion, by weight, lying between 0.1 and 5 percent by weight. There is also disclosed a process for preparing the above-described doping frit, further a method of obtaining vitrifiable anti-electrostatic enamel and a corresponding ceramic product.</description><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>CONDUCTORS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GLASS</subject><subject>INSULATORS</subject><subject>JOINING GLASS TO GLASS OR OTHER MATERIALS</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>MINERAL OR SLAG WOOL</subject><subject>NATURALLY-OCCURRING ELECTRICITY</subject><subject>REFRACTORIES</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SLAG</subject><subject>STATIC ELECTRICITY</subject><subject>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</subject><subject>SURFACE TREATMENT OF GLASS</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFjTEOgkAQRWksjHoG9wCQEDHGWtR4ACsbMiyzMsmyQ3YHE2_m8QQxFDZWk_w__7159DpyS-6ujCdRoSOB0qIy7FXruer00KFFLZ40WPtMNLs-liHX6KEhrdBBgzbEw0RjCD9zqdEjm1g1KDVXio3iUoDcUD6oJxv6WMEJJaOMg4BM6L6pJtsIlmU0M2ADrr53Ea3Pp2t-SbDlAkMLGh1Kkd-yNN1s94dd9v_jDdyJXrY</recordid><startdate>20090401</startdate><enddate>20090401</enddate><creator>NEBOT APARICI ANTONIO</creator><creator>CARDA CASTELLO JUAN B</creator><scope>EVB</scope></search><sort><creationdate>20090401</creationdate><title>Doping frit suitable for producing electrically-conducting ceramic enamels, process for producing thereof, method of obtaining vitrifiable anti-electrostatic enamel and ceramic product</title><author>NEBOT APARICI ANTONIO ; CARDA CASTELLO JUAN B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CZ300248B63</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>cze ; eng</language><creationdate>2009</creationdate><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>CONDUCTORS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GLASS</topic><topic>INSULATORS</topic><topic>JOINING GLASS TO GLASS OR OTHER MATERIALS</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>MINERAL OR SLAG WOOL</topic><topic>NATURALLY-OCCURRING ELECTRICITY</topic><topic>REFRACTORIES</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SLAG</topic><topic>STATIC ELECTRICITY</topic><topic>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</topic><topic>SURFACE TREATMENT OF GLASS</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>NEBOT APARICI ANTONIO</creatorcontrib><creatorcontrib>CARDA CASTELLO JUAN B</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NEBOT APARICI ANTONIO</au><au>CARDA CASTELLO JUAN B</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Doping frit suitable for producing electrically-conducting ceramic enamels, process for producing thereof, method of obtaining vitrifiable anti-electrostatic enamel and ceramic product</title><date>2009-04-01</date><risdate>2009</risdate><abstract>Dotovací frita, vhodná pro výrobu vodivých keramických smaltu, je složena ze 45 až 65 % hmotnostních SiO.sub.2.n. vzhledem k celku, a 55 až 35 % hmotnostních smesi oxidu, pricemž obsahuje alespon oxid dvojmocného prvku v pomeru hmotnostním, ležícím mezi 3 a 35 % hmotnostními, alespon oxid trojmocného prvku v pomeru hmotnostním, ležícím mezi 3 a 25 % hmotnostními, a oxid dotovacího prvku, vybraný ze skupiny, kterou tvorí Li.sub.2.n.O, CuO, Sb.sub.2.n.O.sub.3.n., Sb.sub.2.n.O.sub.5.n., Bi.sub.2.n.O.sub.3.n., V.sub.2.n.O.sub.3.n., V.sub.2.n.O.sub.5.n. a jejich smesi, v pomeru hmotnostním, ležícím mezi 0,1 a 5 %. Vynález se rovnež týká zpusobu výroby této dotovací frity, zpusob získávání zeskelnovatelného antielektrostatického smaltu a príslušného keramického výrobku.
In the present invention, there is disclosed a doping frit suitable for producing electrically-conducting ceramic enamels containing 45 to 65 percent by weight of SiOi2 based on the doping frit total weight, and 55 to 35 percent by weight of a mixture of oxides that comprises: at least, an oxide of a divalent element, in a proportion, by weight, lying between 3 and 35 percent by weight; at least, an oxide of a trivalent element in a proportion, by weight, lying between 3 and 25 percent by weight; and an oxide of a doping element being selected from the group consisting of Lii2O, CuO, Sbi2Oi3, Sbi2Oi5, Bii2Oi3, Vi2Oi3, Vi2Oi5, and mixtures thereof, in a proportion, by weight, lying between 0.1 and 5 percent by weight. There is also disclosed a process for preparing the above-described doping frit, further a method of obtaining vitrifiable anti-electrostatic enamel and a corresponding ceramic product.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CABLES CEMENTS CERAMICS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CONDUCTORS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY GLASS INSULATORS JOINING GLASS TO GLASS OR OTHER MATERIALS LIME, MAGNESIA METALLURGY MINERAL OR SLAG WOOL NATURALLY-OCCURRING ELECTRICITY REFRACTORIES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES SLAG STATIC ELECTRICITY SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS TREATMENT OF NATURAL STONE |
title | Doping frit suitable for producing electrically-conducting ceramic enamels, process for producing thereof, method of obtaining vitrifiable anti-electrostatic enamel and ceramic product |
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