INJECTION INTEGRATED CIRCUIT
The circuit exhibits a current source formed by bipolar transistor (1). The emitter (2) of the bipolar transistor (1) is connected to a feed source, not shown. A field-effect transistor (8) has its drain electrode (10) connected to an output terminal (11), its source electrode (9) to the earth termi...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | LAVROV,VADIM V.,SU SLADKOV,VIKTOR I.,SU KOKIN,VILJAM N.,SU NAZARJAN,ARTASES R.,SU KREMLEV,VJACESLAV J.,SU VENKOV,BORIS V.,SU |
| description | The circuit exhibits a current source formed by bipolar transistor (1). The emitter (2) of the bipolar transistor (1) is connected to a feed source, not shown. A field-effect transistor (8) has its drain electrode (10) connected to an output terminal (11), its source electrode (9) to the earth terminal (5) and to the base electrode (4) of the bipolar transistor (1), and its gate electrodes (12, 12') connected to input terminals (7, 7') and to collector electrodes (6, 6') of the bipolar transistor (1). Depending on its design, the circuit is used as NOR or NAND gate. Non-injecting rectifier contacts of the gate electrodes (12, 12'), which are also constructed as metal semiconductor junctions or respectively as Schottky diodes like the collector electrodes (6, 6'), result in shorter switching times of the circuit. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CS199407B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CS199407B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CS199407B13</originalsourceid><addsrcrecordid>eNrjZJDx9PNydQ7x9PdT8PQLcXUPcgxxdVFw9gxyDvUM4WFgTUvMKU7lhdLcDPJuriHOHrqpBfnxqcUFicmpeakl8c7BhpaWJgbmTobGhFUAAACaICY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>INJECTION INTEGRATED CIRCUIT</title><source>esp@cenet</source><creator>LAVROV,VADIM V.,SU ; SLADKOV,VIKTOR I.,SU ; KOKIN,VILJAM N.,SU ; NAZARJAN,ARTASES R.,SU ; KREMLEV,VJACESLAV J.,SU ; VENKOV,BORIS V.,SU</creator><creatorcontrib>LAVROV,VADIM V.,SU ; SLADKOV,VIKTOR I.,SU ; KOKIN,VILJAM N.,SU ; NAZARJAN,ARTASES R.,SU ; KREMLEV,VJACESLAV J.,SU ; VENKOV,BORIS V.,SU</creatorcontrib><description>The circuit exhibits a current source formed by bipolar transistor (1). The emitter (2) of the bipolar transistor (1) is connected to a feed source, not shown. A field-effect transistor (8) has its drain electrode (10) connected to an output terminal (11), its source electrode (9) to the earth terminal (5) and to the base electrode (4) of the bipolar transistor (1), and its gate electrodes (12, 12') connected to input terminals (7, 7') and to collector electrodes (6, 6') of the bipolar transistor (1). Depending on its design, the circuit is used as NOR or NAND gate. Non-injecting rectifier contacts of the gate electrodes (12, 12'), which are also constructed as metal semiconductor junctions or respectively as Schottky diodes like the collector electrodes (6, 6'), result in shorter switching times of the circuit.</description><edition>3</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PULSE TECHNIQUE ; SEMICONDUCTOR DEVICES</subject><creationdate>1980</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19800731&DB=EPODOC&CC=CS&NR=199407B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19800731&DB=EPODOC&CC=CS&NR=199407B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LAVROV,VADIM V.,SU</creatorcontrib><creatorcontrib>SLADKOV,VIKTOR I.,SU</creatorcontrib><creatorcontrib>KOKIN,VILJAM N.,SU</creatorcontrib><creatorcontrib>NAZARJAN,ARTASES R.,SU</creatorcontrib><creatorcontrib>KREMLEV,VJACESLAV J.,SU</creatorcontrib><creatorcontrib>VENKOV,BORIS V.,SU</creatorcontrib><title>INJECTION INTEGRATED CIRCUIT</title><description>The circuit exhibits a current source formed by bipolar transistor (1). The emitter (2) of the bipolar transistor (1) is connected to a feed source, not shown. A field-effect transistor (8) has its drain electrode (10) connected to an output terminal (11), its source electrode (9) to the earth terminal (5) and to the base electrode (4) of the bipolar transistor (1), and its gate electrodes (12, 12') connected to input terminals (7, 7') and to collector electrodes (6, 6') of the bipolar transistor (1). Depending on its design, the circuit is used as NOR or NAND gate. Non-injecting rectifier contacts of the gate electrodes (12, 12'), which are also constructed as metal semiconductor junctions or respectively as Schottky diodes like the collector electrodes (6, 6'), result in shorter switching times of the circuit.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PULSE TECHNIQUE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1980</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJDx9PNydQ7x9PdT8PQLcXUPcgxxdVFw9gxyDvUM4WFgTUvMKU7lhdLcDPJuriHOHrqpBfnxqcUFicmpeakl8c7BhpaWJgbmTobGhFUAAACaICY</recordid><startdate>19800731</startdate><enddate>19800731</enddate><creator>LAVROV,VADIM V.,SU</creator><creator>SLADKOV,VIKTOR I.,SU</creator><creator>KOKIN,VILJAM N.,SU</creator><creator>NAZARJAN,ARTASES R.,SU</creator><creator>KREMLEV,VJACESLAV J.,SU</creator><creator>VENKOV,BORIS V.,SU</creator><scope>EVB</scope></search><sort><creationdate>19800731</creationdate><title>INJECTION INTEGRATED CIRCUIT</title><author>LAVROV,VADIM V.,SU ; SLADKOV,VIKTOR I.,SU ; KOKIN,VILJAM N.,SU ; NAZARJAN,ARTASES R.,SU ; KREMLEV,VJACESLAV J.,SU ; VENKOV,BORIS V.,SU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CS199407B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1980</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PULSE TECHNIQUE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LAVROV,VADIM V.,SU</creatorcontrib><creatorcontrib>SLADKOV,VIKTOR I.,SU</creatorcontrib><creatorcontrib>KOKIN,VILJAM N.,SU</creatorcontrib><creatorcontrib>NAZARJAN,ARTASES R.,SU</creatorcontrib><creatorcontrib>KREMLEV,VJACESLAV J.,SU</creatorcontrib><creatorcontrib>VENKOV,BORIS V.,SU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LAVROV,VADIM V.,SU</au><au>SLADKOV,VIKTOR I.,SU</au><au>KOKIN,VILJAM N.,SU</au><au>NAZARJAN,ARTASES R.,SU</au><au>KREMLEV,VJACESLAV J.,SU</au><au>VENKOV,BORIS V.,SU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INJECTION INTEGRATED CIRCUIT</title><date>1980-07-31</date><risdate>1980</risdate><abstract>The circuit exhibits a current source formed by bipolar transistor (1). The emitter (2) of the bipolar transistor (1) is connected to a feed source, not shown. A field-effect transistor (8) has its drain electrode (10) connected to an output terminal (11), its source electrode (9) to the earth terminal (5) and to the base electrode (4) of the bipolar transistor (1), and its gate electrodes (12, 12') connected to input terminals (7, 7') and to collector electrodes (6, 6') of the bipolar transistor (1). Depending on its design, the circuit is used as NOR or NAND gate. Non-injecting rectifier contacts of the gate electrodes (12, 12'), which are also constructed as metal semiconductor junctions or respectively as Schottky diodes like the collector electrodes (6, 6'), result in shorter switching times of the circuit.</abstract><edition>3</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_CS199407B1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PULSE TECHNIQUE SEMICONDUCTOR DEVICES |
| title | INJECTION INTEGRATED CIRCUIT |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T13%3A27%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LAVROV,VADIM%20V.,SU&rft.date=1980-07-31&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECS199407B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |