Semiconductor structure

A semiconductor structure includes a substrate; an isolation structure over the substrate; two source/drain structures extending from the substrate; the semiconductor channel layer is suspended above the substrate and is connected with the two source/drain structures; a high dielectric constant metal gate stack located between the two source/drain structures and surrounding each of the semiconductor channel layers; gate spacers located on both sidewalls of the high dielectric constant metal gate stack; a dielectric internal spacer vertically disposed between two adjacent layers of the semiconductor channel layer and vertically located between the gate spacer and the topmost layer of the semiconductor channel layer; and a sidewall spacer over the isolation structure and contacting sidewalls of the two source/drain structures, where the sidewall spacer extends over a bottom surface of a topmost layer of the semiconductor channel layer. 一种半导体结构，包含基底；隔离结构，位于基底上方；两源极/漏极结构，从基底延伸；半导体通道层，悬置于基底上方并连接两源极/漏极结构；高介电常数金属栅极堆