Integrated circuit
The utility model relates to an integrated circuit (integrated circuit; the IC) includes a charge storage device. The charge storage device includes a first charge storage stack extending into the substrate, and a second charge storage stack extending into the substrate and adjacent to the first cha...
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| creator | LIN JUNYING IM MYONG-HUN |
| description | The utility model relates to an integrated circuit (integrated circuit; the IC) includes a charge storage device. The charge storage device includes a first charge storage stack extending into the substrate, and a second charge storage stack extending into the substrate and adjacent to the first charge storage stack in a first direction. The first charge storage stack and the second charge storage stack extend longitudinally along a second direction perpendicular to the first direction, and the first charge storage stack and the second charge storage stack have an offset along the second direction, and the offset is greater than zero.
一种集成电路(integrated circuit；IC)包含电荷储存装置。电荷储存装置包含延伸至基材中的第一电荷储存堆叠，及延伸至基材中并沿第一方向相邻于第一电荷储存堆叠的第二电荷储存堆叠。第一电荷储存堆叠与第二电荷储存堆叠沿垂直于第一方向的第二方向纵向延伸，且第一电荷储存堆叠与第二电荷储存堆叠具有沿第二方向的偏移量，偏移量大于零。 |
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一种集成电路(integrated circuit；IC)包含电荷储存装置。电荷储存装置包含延伸至基材中的第一电荷储存堆叠，及延伸至基材中并沿第一方向相邻于第一电荷储存堆叠的第二电荷储存堆叠。第一电荷储存堆叠与第二电荷储存堆叠沿垂直于第一方向的第二方向纵向延伸，且第一电荷储存堆叠与第二电荷储存堆叠具有沿第二方向的偏移量，偏移量大于零。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240528&DB=EPODOC&CC=CN&NR=221041125U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240528&DB=EPODOC&CC=CN&NR=221041125U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIN JUNYING</creatorcontrib><creatorcontrib>IM MYONG-HUN</creatorcontrib><title>Integrated circuit</title><description>The utility model relates to an integrated circuit (integrated circuit; the IC) includes a charge storage device. The charge storage device includes a first charge storage stack extending into the substrate, and a second charge storage stack extending into the substrate and adjacent to the first charge storage stack in a first direction. The first charge storage stack and the second charge storage stack extend longitudinally along a second direction perpendicular to the first direction, and the first charge storage stack and the second charge storage stack have an offset along the second direction, and the offset is greater than zero.
一种集成电路(integrated circuit；IC)包含电荷储存装置。电荷储存装置包含延伸至基材中的第一电荷储存堆叠，及延伸至基材中并沿第一方向相邻于第一电荷储存堆叠的第二电荷储存堆叠。第一电荷储存堆叠与第二电荷储存堆叠沿垂直于第一方向的第二方向纵向延伸，且第一电荷储存堆叠与第二电荷储存堆叠具有沿第二方向的偏移量，偏移量大于零。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBDyzCtJTS9KLElNUUjOLEouzSzhYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxzn5GRoYGJoaGRqahocZEKQIARoQgyw</recordid><startdate>20240528</startdate><enddate>20240528</enddate><creator>LIN JUNYING</creator><creator>IM MYONG-HUN</creator><scope>EVB</scope></search><sort><creationdate>20240528</creationdate><title>Integrated circuit</title><author>LIN JUNYING ; IM MYONG-HUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN221041125UU3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LIN JUNYING</creatorcontrib><creatorcontrib>IM MYONG-HUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIN JUNYING</au><au>IM MYONG-HUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Integrated circuit</title><date>2024-05-28</date><risdate>2024</risdate><abstract>The utility model relates to an integrated circuit (integrated circuit; the IC) includes a charge storage device. The charge storage device includes a first charge storage stack extending into the substrate, and a second charge storage stack extending into the substrate and adjacent to the first charge storage stack in a first direction. The first charge storage stack and the second charge storage stack extend longitudinally along a second direction perpendicular to the first direction, and the first charge storage stack and the second charge storage stack have an offset along the second direction, and the offset is greater than zero.
一种集成电路(integrated circuit；IC)包含电荷储存装置。电荷储存装置包含延伸至基材中的第一电荷储存堆叠，及延伸至基材中并沿第一方向相邻于第一电荷储存堆叠的第二电荷储存堆叠。第一电荷储存堆叠与第二电荷储存堆叠沿垂直于第一方向的第二方向纵向延伸，且第一电荷储存堆叠与第二电荷储存堆叠具有沿第二方向的偏移量，偏移量大于零。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Integrated circuit |
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