Furnace tube filling sheet and wafer processing device

The utility model provides a furnace tube filling sheet and wafer processing device, and relates to the technical field of semiconductors. The furnace tube filling sheet is arranged at the bottom and the top of a wafer boat, and comprises a silicon substrate; the oxide layer is positioned on one side of the silicon substrate; the silicon nitride layer is positioned on one side, far away from the silicon substrate, of the oxide layer; wherein the thickness of the oxide layer is greater than that of the silicon nitride layer. The furnace tube filling sheet and the wafer processing device provided by the utility model have the advantages that deformation and warping are not easy to occur, and impurity contamination is avoided. 本申请提供了一种炉管填充片与晶圆加工装置，涉及半导体技术领域。该炉管填充片置于晶舟的底部与顶部，炉管填充片包括：硅衬底；位于硅衬底一侧的氧化层；位于氧化层的远离硅衬底一侧的氮化硅层；其中，氧化层的厚度大于氮化硅层的厚度。本申请提供的炉管填充片与晶圆加工装置具有不易出现变形翘曲，且避免了杂质玷污的优点。