Substrate table
The utility model relates to a substrate table which is used for containing a substrate and comprises a base and at least one cover plate. The base is provided with at least one first concave cavity, and the side wall of the first concave cavity is provided with a part abutting against the substrate...
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| creator | PENG ZUJUN PANG TIQIANG YANG JIALE HE SHENWEI HUANG XUERUN PAN PENG |
| description | The utility model relates to a substrate table which is used for containing a substrate and comprises a base and at least one cover plate. The base is provided with at least one first concave cavity, and the side wall of the first concave cavity is provided with a part abutting against the substrate; at least one through hole is formed in each cover plate, the cover plates are matched with the base in a replaceable mode, and the thicknesses of different cover plates are different; when the cover plate is matched with the base, the projection of the first concave cavity is located in the projection edge of the through hole, and the upper surface of the cover plate is higher than the upper surface of the substrate. The thickness of the cover plate can be adjusted according to the growth stage of the substrate, so that the growth state of the substrate is improved, and the growth quality of the substrate is improved.
本申请涉及一种基片台，用于容纳基片，包括底座和至少一盖板；底座上设有至少一第一凹腔，第一凹腔的侧壁具有与基片相抵接的部分；盖板上设有至少一通孔，盖板可更换地与底座配合，不同盖板的厚度不同；盖板 |
| format | Patent |
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本申请涉及一种基片台，用于容纳基片，包括底座和至少一盖板；底座上设有至少一第一凹腔，第一凹腔的侧壁具有与基片相抵接的部分；盖板上设有至少一通孔，盖板可更换地与底座配合，不同盖板的厚度不同；盖板</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240409&DB=EPODOC&CC=CN&NR=220746139U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25566,76549</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240409&DB=EPODOC&CC=CN&NR=220746139U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PENG ZUJUN</creatorcontrib><creatorcontrib>PANG TIQIANG</creatorcontrib><creatorcontrib>YANG JIALE</creatorcontrib><creatorcontrib>HE SHENWEI</creatorcontrib><creatorcontrib>HUANG XUERUN</creatorcontrib><creatorcontrib>PAN PENG</creatorcontrib><title>Substrate table</title><description>The utility model relates to a substrate table which is used for containing a substrate and comprises a base and at least one cover plate. The base is provided with at least one first concave cavity, and the side wall of the first concave cavity is provided with a part abutting against the substrate; at least one through hole is formed in each cover plate, the cover plates are matched with the base in a replaceable mode, and the thicknesses of different cover plates are different; when the cover plate is matched with the base, the projection of the first concave cavity is located in the projection edge of the through hole, and the upper surface of the cover plate is higher than the upper surface of the substrate. The thickness of the cover plate can be adjusted according to the growth stage of the substrate, so that the growth state of the substrate is improved, and the growth quality of the substrate is improved.
本申请涉及一种基片台，用于容纳基片，包括底座和至少一盖板；底座上设有至少一第一凹腔，第一凹腔的侧壁具有与基片相抵接的部分；盖板上设有至少一通孔，盖板可更换地与底座配合，不同盖板的厚度不同；盖板</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOAPLk0qLilKLElVKElMyknlYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxzn5GRgbmJmaGxpahocZEKQIAyJgfsw</recordid><startdate>20240409</startdate><enddate>20240409</enddate><creator>PENG ZUJUN</creator><creator>PANG TIQIANG</creator><creator>YANG JIALE</creator><creator>HE SHENWEI</creator><creator>HUANG XUERUN</creator><creator>PAN PENG</creator><scope>EVB</scope></search><sort><creationdate>20240409</creationdate><title>Substrate table</title><author>PENG ZUJUN ; PANG TIQIANG ; YANG JIALE ; HE SHENWEI ; HUANG XUERUN ; PAN PENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN220746139UU3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>PENG ZUJUN</creatorcontrib><creatorcontrib>PANG TIQIANG</creatorcontrib><creatorcontrib>YANG JIALE</creatorcontrib><creatorcontrib>HE SHENWEI</creatorcontrib><creatorcontrib>HUANG XUERUN</creatorcontrib><creatorcontrib>PAN PENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PENG ZUJUN</au><au>PANG TIQIANG</au><au>YANG JIALE</au><au>HE SHENWEI</au><au>HUANG XUERUN</au><au>PAN PENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Substrate table</title><date>2024-04-09</date><risdate>2024</risdate><abstract>The utility model relates to a substrate table which is used for containing a substrate and comprises a base and at least one cover plate. The base is provided with at least one first concave cavity, and the side wall of the first concave cavity is provided with a part abutting against the substrate; at least one through hole is formed in each cover plate, the cover plates are matched with the base in a replaceable mode, and the thicknesses of different cover plates are different; when the cover plate is matched with the base, the projection of the first concave cavity is located in the projection edge of the through hole, and the upper surface of the cover plate is higher than the upper surface of the substrate. The thickness of the cover plate can be adjusted according to the growth stage of the substrate, so that the growth state of the substrate is improved, and the growth quality of the substrate is improved.
本申请涉及一种基片台，用于容纳基片，包括底座和至少一盖板；底座上设有至少一第一凹腔，第一凹腔的侧壁具有与基片相抵接的部分；盖板上设有至少一通孔，盖板可更换地与底座配合，不同盖板的厚度不同；盖板</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Substrate table |
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