Few-mode vertical optical cavity surface emitting laser with embossment curved surface

The utility model provides a few-mode vertical optical cavity surface emitting laser with a relief curved surface, which relates to the technical field of semiconductor lasers and comprises a VCSEL (vertical cavity surface emitting laser) chip and a relief curved surface structure. The structure seq...

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Hauptverfasser: LIU ZHONGHE, MO QINGWEI
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creator LIU ZHONGHE
MO QINGWEI
description The utility model provides a few-mode vertical optical cavity surface emitting laser with a relief curved surface, which relates to the technical field of semiconductor lasers and comprises a VCSEL (vertical cavity surface emitting laser) chip and a relief curved surface structure. The structure sequentially comprises an n-type electrode, an n-type substrate, a bottom DBR Bragg reflector, an optical active layer, an oxidation window layer, a top DBR Bragg reflector and an embossment curved surface layer according to the epitaxial growth sequence direction. Wherein the embossment curved surface is prepared by means of epitaxial growth of a wafer, dry etching or chemical etching and the like; the morphology equation of the embossment curved surface is obtained through optimization calculation, and the functions of reflection suppression, mode control and the like can be achieved for emergent light of the top Bragg reflector, so that accurate design of an emergent mode and a far-field divergence angle is obtaine
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN220456888UU</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN220456888UU</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN220456888UU3</originalsourceid><addsrcrecordid>eNrjZAhzSy3Xzc1PSVUoSy0qyUxOzFHIL4DQyYllmSWVCsWlRWmJyakKqbmZJSWZeekKOYnFqUUK5ZklGUCxpPzi4tzUvBKF5NKistQUmGoeBta0xJziVF4ozc2g5OYa4uyhm1qQH59aXABUkpdaEu_sZ2RkYGJqZmFhERpqTJQiANKMOv0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Few-mode vertical optical cavity surface emitting laser with embossment curved surface</title><source>esp@cenet</source><creator>LIU ZHONGHE ; MO QINGWEI</creator><creatorcontrib>LIU ZHONGHE ; MO QINGWEI</creatorcontrib><description>The utility model provides a few-mode vertical optical cavity surface emitting laser with a relief curved surface, which relates to the technical field of semiconductor lasers and comprises a VCSEL (vertical cavity surface emitting laser) chip and a relief curved surface structure. The structure sequentially comprises an n-type electrode, an n-type substrate, a bottom DBR Bragg reflector, an optical active layer, an oxidation window layer, a top DBR Bragg reflector and an embossment curved surface layer according to the epitaxial growth sequence direction. Wherein the embossment curved surface is prepared by means of epitaxial growth of a wafer, dry etching or chemical etching and the like; the morphology equation of the embossment curved surface is obtained through optimization calculation, and the functions of reflection suppression, mode control and the like can be achieved for emergent light of the top Bragg reflector, so that accurate design of an emergent mode and a far-field divergence angle is obtaine</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240206&amp;DB=EPODOC&amp;CC=CN&amp;NR=220456888U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240206&amp;DB=EPODOC&amp;CC=CN&amp;NR=220456888U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIU ZHONGHE</creatorcontrib><creatorcontrib>MO QINGWEI</creatorcontrib><title>Few-mode vertical optical cavity surface emitting laser with embossment curved surface</title><description>The utility model provides a few-mode vertical optical cavity surface emitting laser with a relief curved surface, which relates to the technical field of semiconductor lasers and comprises a VCSEL (vertical cavity surface emitting laser) chip and a relief curved surface structure. The structure sequentially comprises an n-type electrode, an n-type substrate, a bottom DBR Bragg reflector, an optical active layer, an oxidation window layer, a top DBR Bragg reflector and an embossment curved surface layer according to the epitaxial growth sequence direction. Wherein the embossment curved surface is prepared by means of epitaxial growth of a wafer, dry etching or chemical etching and the like; the morphology equation of the embossment curved surface is obtained through optimization calculation, and the functions of reflection suppression, mode control and the like can be achieved for emergent light of the top Bragg reflector, so that accurate design of an emergent mode and a far-field divergence angle is obtaine</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAhzSy3Xzc1PSVUoSy0qyUxOzFHIL4DQyYllmSWVCsWlRWmJyakKqbmZJSWZeekKOYnFqUUK5ZklGUCxpPzi4tzUvBKF5NKistQUmGoeBta0xJziVF4ozc2g5OYa4uyhm1qQH59aXABUkpdaEu_sZ2RkYGJqZmFhERpqTJQiANKMOv0</recordid><startdate>20240206</startdate><enddate>20240206</enddate><creator>LIU ZHONGHE</creator><creator>MO QINGWEI</creator><scope>EVB</scope></search><sort><creationdate>20240206</creationdate><title>Few-mode vertical optical cavity surface emitting laser with embossment curved surface</title><author>LIU ZHONGHE ; MO QINGWEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN220456888UU3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>LIU ZHONGHE</creatorcontrib><creatorcontrib>MO QINGWEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIU ZHONGHE</au><au>MO QINGWEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Few-mode vertical optical cavity surface emitting laser with embossment curved surface</title><date>2024-02-06</date><risdate>2024</risdate><abstract>The utility model provides a few-mode vertical optical cavity surface emitting laser with a relief curved surface, which relates to the technical field of semiconductor lasers and comprises a VCSEL (vertical cavity surface emitting laser) chip and a relief curved surface structure. The structure sequentially comprises an n-type electrode, an n-type substrate, a bottom DBR Bragg reflector, an optical active layer, an oxidation window layer, a top DBR Bragg reflector and an embossment curved surface layer according to the epitaxial growth sequence direction. Wherein the embossment curved surface is prepared by means of epitaxial growth of a wafer, dry etching or chemical etching and the like; the morphology equation of the embossment curved surface is obtained through optimization calculation, and the functions of reflection suppression, mode control and the like can be achieved for emergent light of the top Bragg reflector, so that accurate design of an emergent mode and a far-field divergence angle is obtaine</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
title Few-mode vertical optical cavity surface emitting laser with embossment curved surface
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T15%3A03%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LIU%20ZHONGHE&rft.date=2024-02-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN220456888UU%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true