IPS type TFT-LCD pixel structure

The utility model discloses an IPS (In-Plane Switching) type TFT-LCD (Thin Film Transistor-Liquid Crystal Display) pixel structure, which comprises a substrate, a gate electrode layer, a gate insulating layer, a silicon island, a source drain electrode, a first SiNx insulating layer, a second SiNx i...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	HONG SHENGBAO, LI LIN, ZHUANG CHONGYING, HE RUICHU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The utility model discloses an IPS (In-Plane Switching) type TFT-LCD (Thin Film Transistor-Liquid Crystal Display) pixel structure, which comprises a substrate, a gate electrode layer, a gate insulating layer, a silicon island, a source drain electrode, a first SiNx insulating layer, a second SiNx insulating layer, a pixel electrode, a third SiNx insulating layer and a common electrode which are sequentially arranged from bottom to top, a first contact hole is formed between the gate electrode layer and the source drain electrode, and a second contact hole is formed between the gate electrode layer and the common electrode. A second contact hole 600 is formed between the source and drain electrodes and the pixel electrode, and a third contact hole 700 is formed between the source and drain electrodes and the common electrode. According to the utility model, by adding the first SiNx insulating layer, the second SiNx insulating layer and the third SiNx insulating layer, the stray capacitance of the signal line