Semiconductor device

The embodiment of the utility model provides a semiconductor device. The semiconductor device includes a first conductive layer covering a first insulating layer, where the first conductive layer includes a first region and a second region separated from the first region. The first dielectric layer covers the first region and the second region of the first conductive layer. The second conductive layer covers a first portion of the first region of the first conductive layer. The second dielectric layer covers the second conductive layer and the first conductive layer. The third conductive layer covers the first dielectric layer and the second dielectric layer. The third dielectric layer covers the third conductive layer. The first conductive contact electrically contacts the first region of the first conductive layer, and the second conductive contact electrically contacts the second region of the first conductive layer and the third conductive layer. The second conductive layer is an electrically floating lay