Plasma processing device and HDP-CVD equipment

The utility model relates to the technical field of semiconductors, in particular to a plasma processing device and HDP-CVD equipment. The plasma processing device comprises an electrostatic chuck and a focusing ring structure, a wafer setting area coaxial with the electrostatic chuck is arranged above the electrostatic chuck and used for placing a wafer, and the peripheral part of the wafer setting area protrudes out of the peripheral side wall of the electrostatic chuck; the focusing ring structure comprises a first ring body part and a protruding part protruding out of the upper surface of the first ring body part, the protruding part is arranged around the peripheral part of the wafer arrangement area, the first ring body part is arranged around the peripheral side wall of the electrostatic chuck, and a first gap is reserved between the bottom surface of the peripheral part of the wafer arrangement area and the upper surface of the first ring body part. According to the plasma processing device and the HD