Pixel circuit and semiconductor device

The utility model utility relates to a pixel circuit and a semiconductor device. A pixel circuit is characterized by comprising: an interconnection structure including a conductive element; an insulating layer on and in contact with a surface of the interconnect structure, the conductive element being coplanar with the surface; an opening through the insulating layer to the conductive element; a sidewall extending away from the conductive element; an electrode on and in contact with the conductive element, on the sidewall and on a surface of the insulating layer; and a film on the electrode, in the opening, and on a surface of the insulating layer, the film configured to convert photons into electron-hole pairs when rays at an operating wavelength of the pixel circuit reach the pixel circuit. With embodiments of the present disclosure, the risk of film delamination or rupture is zero or almost zero. 本公开涉及像素电路以及半导体器件。一种像素电路，其特征在于，包括：包括导电元件的互连结构；绝缘层，在互连结构的表面上并且与表面接触，导电元件与表面共面；开口，穿过绝缘层到达导电元件；侧壁，延伸远离导电元件；电极，在导电元件