High-frequency-band terahertz receiving front-end circuit

High-frequency-band terahertz receiving front-end circuit

The utility model discloses a high-frequency-band terahertz receiving front-end circuit, the circuit structure of the terahertz receiving front end comprises a frequency mixing structure, a frequencymultiplication structure and an output end DC/IF bonding pad, and the frequency multiplier structure...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ZHANG MENG, HUANG ZHI, HE NING, LI SHUOXING
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
GENERATION OF NOISE BY SUCH CIRCUITS
GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING,BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN ANON-SWITCHING MANNER
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator ZHANG MENG
HUANG ZHI
HE NING
LI SHUOXING
description The utility model discloses a high-frequency-band terahertz receiving front-end circuit, the circuit structure of the terahertz receiving front end comprises a frequency mixing structure, a frequencymultiplication structure and an output end DC/IF bonding pad, and the frequency multiplier structure comprises a local oscillator input probe, a first low pass filter, a first transmission line and anonlinear Schottky diode pair structure which are connected in sequence; the frequency mixing structure comprises a radio frequency receiving end, a Schottky diode, a matching circuit and a second low-pass filter, the radio frequency receiving end receives external terahertz signals, and the output end DC/IF bonding pad is fed with direct current bias; local oscillation signals subjected to frequency multiplication of the single-stage nine-frequency multiplication structure are subjected to frequency mixing with received terahertz signals through a frequency mixing structure through a matchingcircuit, are finally filte
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN212343736UU</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN212343736UU</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN212343736UU3</originalsourceid><addsrcrecordid>eNrjZLD0yEzP0E0rSi0sTc1LrtRNSsxLUShJLUrMSC0qqVIoSk1OzSzLzEtXSCvKzyvRTQXKJmcWJZdmlvAwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NTigsTk1LzUknhnPyNDI2MTY3Njs9BQY6IUAQDFKi_I</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>High-frequency-band terahertz receiving front-end circuit</title><source>esp@cenet</source><creator>ZHANG MENG ; HUANG ZHI ; HE NING ; LI SHUOXING</creator><creatorcontrib>ZHANG MENG ; HUANG ZHI ; HE NING ; LI SHUOXING</creatorcontrib><description>The utility model discloses a high-frequency-band terahertz receiving front-end circuit, the circuit structure of the terahertz receiving front end comprises a frequency mixing structure, a frequencymultiplication structure and an output end DC/IF bonding pad, and the frequency multiplier structure comprises a local oscillator input probe, a first low pass filter, a first transmission line and anonlinear Schottky diode pair structure which are connected in sequence; the frequency mixing structure comprises a radio frequency receiving end, a Schottky diode, a matching circuit and a second low-pass filter, the radio frequency receiving end receives external terahertz signals, and the output end DC/IF bonding pad is fed with direct current bias; local oscillation signals subjected to frequency multiplication of the single-stage nine-frequency multiplication structure are subjected to frequency mixing with received terahertz signals through a frequency mixing structure through a matchingcircuit, are finally filte</description><language>chi ; eng</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; GENERATION OF NOISE BY SUCH CIRCUITS ; GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING,BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN ANON-SWITCHING MANNER</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210112&amp;DB=EPODOC&amp;CC=CN&amp;NR=212343736U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210112&amp;DB=EPODOC&amp;CC=CN&amp;NR=212343736U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHANG MENG</creatorcontrib><creatorcontrib>HUANG ZHI</creatorcontrib><creatorcontrib>HE NING</creatorcontrib><creatorcontrib>LI SHUOXING</creatorcontrib><title>High-frequency-band terahertz receiving front-end circuit</title><description>The utility model discloses a high-frequency-band terahertz receiving front-end circuit, the circuit structure of the terahertz receiving front end comprises a frequency mixing structure, a frequencymultiplication structure and an output end DC/IF bonding pad, and the frequency multiplier structure comprises a local oscillator input probe, a first low pass filter, a first transmission line and anonlinear Schottky diode pair structure which are connected in sequence; the frequency mixing structure comprises a radio frequency receiving end, a Schottky diode, a matching circuit and a second low-pass filter, the radio frequency receiving end receives external terahertz signals, and the output end DC/IF bonding pad is fed with direct current bias; local oscillation signals subjected to frequency multiplication of the single-stage nine-frequency multiplication structure are subjected to frequency mixing with received terahertz signals through a frequency mixing structure through a matchingcircuit, are finally filte</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>GENERATION OF NOISE BY SUCH CIRCUITS</subject><subject>GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING,BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN ANON-SWITCHING MANNER</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD0yEzP0E0rSi0sTc1LrtRNSsxLUShJLUrMSC0qqVIoSk1OzSzLzEtXSCvKzyvRTQXKJmcWJZdmlvAwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NTigsTk1LzUknhnPyNDI2MTY3Njs9BQY6IUAQDFKi_I</recordid><startdate>20210112</startdate><enddate>20210112</enddate><creator>ZHANG MENG</creator><creator>HUANG ZHI</creator><creator>HE NING</creator><creator>LI SHUOXING</creator><scope>EVB</scope></search><sort><creationdate>20210112</creationdate><title>High-frequency-band terahertz receiving front-end circuit</title><author>ZHANG MENG ; HUANG ZHI ; HE NING ; LI SHUOXING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN212343736UU3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>GENERATION OF NOISE BY SUCH CIRCUITS</topic><topic>GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING,BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN ANON-SWITCHING MANNER</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHANG MENG</creatorcontrib><creatorcontrib>HUANG ZHI</creatorcontrib><creatorcontrib>HE NING</creatorcontrib><creatorcontrib>LI SHUOXING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHANG MENG</au><au>HUANG ZHI</au><au>HE NING</au><au>LI SHUOXING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>High-frequency-band terahertz receiving front-end circuit</title><date>2021-01-12</date><risdate>2021</risdate><abstract>The utility model discloses a high-frequency-band terahertz receiving front-end circuit, the circuit structure of the terahertz receiving front end comprises a frequency mixing structure, a frequencymultiplication structure and an output end DC/IF bonding pad, and the frequency multiplier structure comprises a local oscillator input probe, a first low pass filter, a first transmission line and anonlinear Schottky diode pair structure which are connected in sequence; the frequency mixing structure comprises a radio frequency receiving end, a Schottky diode, a matching circuit and a second low-pass filter, the radio frequency receiving end receives external terahertz signals, and the output end DC/IF bonding pad is fed with direct current bias; local oscillation signals subjected to frequency multiplication of the single-stage nine-frequency multiplication structure are subjected to frequency mixing with received terahertz signals through a frequency mixing structure through a matchingcircuit, are finally filte</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_CN212343736UU
source esp@cenet
subjects BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
GENERATION OF NOISE BY SUCH CIRCUITS
GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING,BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN ANON-SWITCHING MANNER
title High-frequency-band terahertz receiving front-end circuit
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T00%3A40%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ZHANG%20MENG&rft.date=2021-01-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN212343736UU%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true