NJFET device

An NJFET device relates to the semiconductor technology, comprises a P substrate, an isolation medium, an N epitaxial region, a P-type buried layer, a deep phosphorus injection region, a source region, a drain region, a channel region, a gate region and a silicon dioxide oxide layer, and is characterized by further comprising a P well, and the P-type buried layer, the deep phosphorus injection region, the source region, the drain region, the channel region and the gate region are embedded in the P well. According to the utility model, the conventional P substrate N epitaxial SOI complementarybipolar process can support the NJFET device, so that the process can simultaneously comprise two complementary JFET devices, namely a PJFET device and an NJFET device. NJFET器件，涉及半导体技术，本实用新型的NJFET器件包括P衬底、隔离介质、N外延区、P型埋层、深磷注入区、源区、漏区、沟道区、栅区、二氧化硅氧化层，其特征在于，还包括P阱，所述P型埋层、深磷注入区、源区、漏区、沟道区和栅区嵌入P阱。本实用新型可以使现有P衬底N外延SOI互补双极工艺支持NJFET器件，使得该工艺可以同时包含PJFET和NJFET器件两种互补的JFET器件。