Bonding layer structure

A bonding layer structure is disclosed. The present disclosure is a method of bonding an electrostatic chuck to a temperature control base. According to an embodiment, a bonding layer is formed between a dielectric body including an electrostatic chuck and a temperature control base. The flow apertu...

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Hauptverfasser: VIJAY D.PARKHE, ROGER ALAN LINDLEY
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ROGER ALAN LINDLEY
description A bonding layer structure is disclosed. The present disclosure is a method of bonding an electrostatic chuck to a temperature control base. According to an embodiment, a bonding layer is formed between a dielectric body including an electrostatic chuck and a temperature control base. The flow aperture extends through the dielectric body and is aligned with the flow aperture in the temperature control base. The bonding layer is also configured with an opening aligned with the holes in the dielectric body and the temperature control base. In one aspect, a porous plug may be disposed within the flow hole to protect the bonding layer. In another aspect, a seal is disposed within the flow orifice to seal the bonding layer from gas in the flow orifice. 公开了一种结合层结构。本公开是将静电吸盘结合到温度控制基部的方法。根据实施方式,在包括静电吸盘的介电主体与温度控制基部之间形成结合层。流孔延伸穿过介电主体并且与温度控制基部中的流孔对准。结合层还配置有开口,开口与介电主体和温度控制基部中的孔对准。在一个方面中,可以将多孔插塞设置在流孔内以保护结合层。在另一方面中,将密封件设置在流孔内以密封结合层,使其与流孔中的气体隔离。
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According to an embodiment, a bonding layer is formed between a dielectric body including an electrostatic chuck and a temperature control base. The flow aperture extends through the dielectric body and is aligned with the flow aperture in the temperature control base. The bonding layer is also configured with an opening aligned with the holes in the dielectric body and the temperature control base. In one aspect, a porous plug may be disposed within the flow hole to protect the bonding layer. In another aspect, a seal is disposed within the flow orifice to seal the bonding layer from gas in the flow orifice. 公开了一种结合层结构。本公开是将静电吸盘结合到温度控制基部的方法。根据实施方式,在包括静电吸盘的介电主体与温度控制基部之间形成结合层。流孔延伸穿过介电主体并且与温度控制基部中的流孔对准。结合层还配置有开口,开口与介电主体和温度控制基部中的孔对准。在一个方面中,可以将多孔插塞设置在流孔内以保护结合层。在另一方面中,将密封件设置在流孔内以密封结合层,使其与流孔中的气体隔离。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20201016&amp;DB=EPODOC&amp;CC=CN&amp;NR=211700228U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20201016&amp;DB=EPODOC&amp;CC=CN&amp;NR=211700228U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VIJAY D.PARKHE</creatorcontrib><creatorcontrib>ROGER ALAN LINDLEY</creatorcontrib><title>Bonding layer structure</title><description>A bonding layer structure is disclosed. 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Bonding layer structure
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