Crystal growth device
The utility model provides a crystal growth device, which comprises an upper crucible, a lower crucible, a plurality of upper sieve pores and a plurality of lower sieve pores, the lower crucible is located below the upper crucible, the bottom of the lower crucible is closed, a plurality of lower sie...
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| creator | GAO LIZHI LIU WEI LIU YUANYUAN ZHENG RONGQING ZHOU GUOSHUN ZHOU MIN ZHANG HU |
| description | The utility model provides a crystal growth device, which comprises an upper crucible, a lower crucible, a plurality of upper sieve pores and a plurality of lower sieve pores, the lower crucible is located below the upper crucible, the bottom of the lower crucible is closed, a plurality of lower sieve holes are formed in the top of the lower crucible, and the lower sieve holes and the upper sieveholes are formed in a staggered mode; the upper crucible and the lower crucible are both arranged in the heat preservation structure cavity; and the lifting device comprises a first lifting device forcontrolling the upper crucible to move and a second lifting device for controlling the lower crucible to move. According to the device disclosed by the utility model, the upper crucible and the lowercrucible are arranged, and carbonized powder in the crystal growth process is filtered out through the upper sieve pores in the bottom of the upper crucible; the lower sieve pores in the top of the lower crucible are used for |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN211620663UU</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN211620663UU</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN211620663UU3</originalsourceid><addsrcrecordid>eNrjZBB1LqosLknMUUgvyi8vyVBISS3LTE7lYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxzn5GhoZmRgZmZsahocZEKQIAwhUh8w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Crystal growth device</title><source>esp@cenet</source><creator>GAO LIZHI ; LIU WEI ; LIU YUANYUAN ; ZHENG RONGQING ; ZHOU GUOSHUN ; ZHOU MIN ; ZHANG HU</creator><creatorcontrib>GAO LIZHI ; LIU WEI ; LIU YUANYUAN ; ZHENG RONGQING ; ZHOU GUOSHUN ; ZHOU MIN ; ZHANG HU</creatorcontrib><description>The utility model provides a crystal growth device, which comprises an upper crucible, a lower crucible, a plurality of upper sieve pores and a plurality of lower sieve pores, the lower crucible is located below the upper crucible, the bottom of the lower crucible is closed, a plurality of lower sieve holes are formed in the top of the lower crucible, and the lower sieve holes and the upper sieveholes are formed in a staggered mode; the upper crucible and the lower crucible are both arranged in the heat preservation structure cavity; and the lifting device comprises a first lifting device forcontrolling the upper crucible to move and a second lifting device for controlling the lower crucible to move. According to the device disclosed by the utility model, the upper crucible and the lowercrucible are arranged, and carbonized powder in the crystal growth process is filtered out through the upper sieve pores in the bottom of the upper crucible; the lower sieve pores in the top of the lower crucible are used for</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201002&DB=EPODOC&CC=CN&NR=211620663U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201002&DB=EPODOC&CC=CN&NR=211620663U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GAO LIZHI</creatorcontrib><creatorcontrib>LIU WEI</creatorcontrib><creatorcontrib>LIU YUANYUAN</creatorcontrib><creatorcontrib>ZHENG RONGQING</creatorcontrib><creatorcontrib>ZHOU GUOSHUN</creatorcontrib><creatorcontrib>ZHOU MIN</creatorcontrib><creatorcontrib>ZHANG HU</creatorcontrib><title>Crystal growth device</title><description>The utility model provides a crystal growth device, which comprises an upper crucible, a lower crucible, a plurality of upper sieve pores and a plurality of lower sieve pores, the lower crucible is located below the upper crucible, the bottom of the lower crucible is closed, a plurality of lower sieve holes are formed in the top of the lower crucible, and the lower sieve holes and the upper sieveholes are formed in a staggered mode; the upper crucible and the lower crucible are both arranged in the heat preservation structure cavity; and the lifting device comprises a first lifting device forcontrolling the upper crucible to move and a second lifting device for controlling the lower crucible to move. According to the device disclosed by the utility model, the upper crucible and the lowercrucible are arranged, and carbonized powder in the crystal growth process is filtered out through the upper sieve pores in the bottom of the upper crucible; the lower sieve pores in the top of the lower crucible are used for</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBB1LqosLknMUUgvyi8vyVBISS3LTE7lYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxzn5GhoZmRgZmZsahocZEKQIAwhUh8w</recordid><startdate>20201002</startdate><enddate>20201002</enddate><creator>GAO LIZHI</creator><creator>LIU WEI</creator><creator>LIU YUANYUAN</creator><creator>ZHENG RONGQING</creator><creator>ZHOU GUOSHUN</creator><creator>ZHOU MIN</creator><creator>ZHANG HU</creator><scope>EVB</scope></search><sort><creationdate>20201002</creationdate><title>Crystal growth device</title><author>GAO LIZHI ; LIU WEI ; LIU YUANYUAN ; ZHENG RONGQING ; ZHOU GUOSHUN ; ZHOU MIN ; ZHANG HU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN211620663UU3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>GAO LIZHI</creatorcontrib><creatorcontrib>LIU WEI</creatorcontrib><creatorcontrib>LIU YUANYUAN</creatorcontrib><creatorcontrib>ZHENG RONGQING</creatorcontrib><creatorcontrib>ZHOU GUOSHUN</creatorcontrib><creatorcontrib>ZHOU MIN</creatorcontrib><creatorcontrib>ZHANG HU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GAO LIZHI</au><au>LIU WEI</au><au>LIU YUANYUAN</au><au>ZHENG RONGQING</au><au>ZHOU GUOSHUN</au><au>ZHOU MIN</au><au>ZHANG HU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Crystal growth device</title><date>2020-10-02</date><risdate>2020</risdate><abstract>The utility model provides a crystal growth device, which comprises an upper crucible, a lower crucible, a plurality of upper sieve pores and a plurality of lower sieve pores, the lower crucible is located below the upper crucible, the bottom of the lower crucible is closed, a plurality of lower sieve holes are formed in the top of the lower crucible, and the lower sieve holes and the upper sieveholes are formed in a staggered mode; the upper crucible and the lower crucible are both arranged in the heat preservation structure cavity; and the lifting device comprises a first lifting device forcontrolling the upper crucible to move and a second lifting device for controlling the lower crucible to move. According to the device disclosed by the utility model, the upper crucible and the lowercrucible are arranged, and carbonized powder in the crystal growth process is filtered out through the upper sieve pores in the bottom of the upper crucible; the lower sieve pores in the top of the lower crucible are used for</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Crystal growth device |
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