Ion implantation apparatus

Ion implantation apparatus

The utility model relates to an ion implantation device. The ion implantation equipment is applied to a copper indium gallium diselenide (CIGS) film preparation device. The preparation device comprises a process cavity, the process cavity is used for forming a CIGS thin film on a substrate, and the...

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Hauptverfasser: XU YI, ZHANG SHIGE
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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ZHANG SHIGE
description The utility model relates to an ion implantation device. The ion implantation equipment is applied to a copper indium gallium diselenide (CIGS) film preparation device. The preparation device comprises a process cavity, the process cavity is used for forming a CIGS thin film on a substrate, and the ion implantation equipment comprises an ion accommodating cavity, an ion injection device and a control device, the ion accommodating cavity is located in the process cavity, the ion accommodating cavity comprises a release port, and the release port is located below the substrate where the CIGS thin film is formed; the ion generating component is positioned in the ion accommodating cavity and is used for generating alkali metal ions in the ion accommodating cavity; and the ion acceleration component is positioned in the process cavity and is used for accelerating the alkali metal ions generated by the ion generation component, so that the alkali metal ions are ejected from the release opening and are ejected to th
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The preparation device comprises a process cavity, the process cavity is used for forming a CIGS thin film on a substrate, and the ion implantation equipment comprises an ion accommodating cavity, an ion injection device and a control device, the ion accommodating cavity is located in the process cavity, the ion accommodating cavity comprises a release port, and the release port is located below the substrate where the CIGS thin film is formed; the ion generating component is positioned in the ion accommodating cavity and is used for generating alkali metal ions in the ion accommodating cavity; and the ion acceleration component is positioned in the process cavity and is used for accelerating the alkali metal ions generated by the ion generation component, so that the alkali metal ions are ejected from the release opening and are ejected to th</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20191217&amp;DB=EPODOC&amp;CC=CN&amp;NR=209804588U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20191217&amp;DB=EPODOC&amp;CC=CN&amp;NR=209804588U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>XU YI</creatorcontrib><creatorcontrib>ZHANG SHIGE</creatorcontrib><title>Ion implantation apparatus</title><description>The utility model relates to an ion implantation device. 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The preparation device comprises a process cavity, the process cavity is used for forming a CIGS thin film on a substrate, and the ion implantation equipment comprises an ion accommodating cavity, an ion injection device and a control device, the ion accommodating cavity is located in the process cavity, the ion accommodating cavity comprises a release port, and the release port is located below the substrate where the CIGS thin film is formed; the ion generating component is positioned in the ion accommodating cavity and is used for generating alkali metal ions in the ion accommodating cavity; and the ion acceleration component is positioned in the process cavity and is used for accelerating the alkali metal ions generated by the ion generation component, so that the alkali metal ions are ejected from the release opening and are ejected to th</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Ion implantation apparatus
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