Big open circuit voltage nanometer heterojunction solar cell
The utility model discloses a big open circuit voltage nanometer heterojunction solar cell. Does it include substrate layer, p type semiconductor nano wire, golden electrode, passivation layer, n type semiconductor films, titanium electrode. Be equipped with p on the substrate layer type semiconduct...
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creator | YU FENGJUN MENG DAN HU DAN TANG ZHENJIE NIU XIAOPING ZHANG XIWEI JIA SHUANWEN |
description | The utility model discloses a big open circuit voltage nanometer heterojunction solar cell. Does it include substrate layer, p type semiconductor nano wire, golden electrode, passivation layer, n type semiconductor films, titanium electrode. Be equipped with p on the substrate layer type semiconductor nano wire, P be equipped with golden electrode on the one end of type semiconductor nano wire, P be equipped with the passivation layer on the other end of type semiconductor nano wire, be equipped with n on the passivation layer type semiconductor films, N be equipped with titanium electrode on the type semiconductor films. The utility model discloses a nanometer heterostructure, selection, configuration optimization through the material have realized that open circuit voltage reaches the big open circuit voltage solar cell more than the 1V.
本实用新型公开了种大开路电压纳米异质结太阳能电池。其包括衬底层、p-型半导体纳米线、金电极、钝化层、n-型半导体薄膜、钛电极。所述衬底层之上设有p-型半导体纳米线,所述p-型半导体纳米线的端之上设有金电极,所述p-型半导体纳米线的另端之上设有钝化层,所述钝化层之上设有n-型半导体薄膜,所述n-型半导体薄膜之上设有钛电极。本实用新型采用纳米异质 |
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本实用新型公开了种大开路电压纳米异质结太阳能电池。其包括衬底层、p-型半导体纳米线、金电极、钝化层、n-型半导体薄膜、钛电极。所述衬底层之上设有p-型半导体纳米线,所述p-型半导体纳米线的端之上设有金电极,所述p-型半导体纳米线的另端之上设有钝化层,所述钝化层之上设有n-型半导体薄膜,所述n-型半导体薄膜之上设有钛电极。本实用新型采用纳米异质</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION ; SEMICONDUCTOR DEVICES ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170111&DB=EPODOC&CC=CN&NR=205881919U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170111&DB=EPODOC&CC=CN&NR=205881919U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YU FENGJUN</creatorcontrib><creatorcontrib>MENG DAN</creatorcontrib><creatorcontrib>HU DAN</creatorcontrib><creatorcontrib>TANG ZHENJIE</creatorcontrib><creatorcontrib>NIU XIAOPING</creatorcontrib><creatorcontrib>ZHANG XIWEI</creatorcontrib><creatorcontrib>JIA SHUANWEN</creatorcontrib><title>Big open circuit voltage nanometer heterojunction solar cell</title><description>The utility model discloses a big open circuit voltage nanometer heterojunction solar cell. Does it include substrate layer, p type semiconductor nano wire, golden electrode, passivation layer, n type semiconductor films, titanium electrode. Be equipped with p on the substrate layer type semiconductor nano wire, P be equipped with golden electrode on the one end of type semiconductor nano wire, P be equipped with the passivation layer on the other end of type semiconductor nano wire, be equipped with n on the passivation layer type semiconductor films, N be equipped with titanium electrode on the type semiconductor films. The utility model discloses a nanometer heterostructure, selection, configuration optimization through the material have realized that open circuit voltage reaches the big open circuit voltage solar cell more than the 1V.
本实用新型公开了种大开路电压纳米异质结太阳能电池。其包括衬底层、p-型半导体纳米线、金电极、钝化层、n-型半导体薄膜、钛电极。所述衬底层之上设有p-型半导体纳米线,所述p-型半导体纳米线的端之上设有金电极,所述p-型半导体纳米线的另端之上设有钝化层,所述钝化层之上设有n-型半导体薄膜,所述n-型半导体薄膜之上设有钛电极。本实用新型采用纳米异质</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><subject>TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLBxykxXyC9IzVNIzixKLs0sUSjLzylJTE9VyEvMy89NLUktUsgAkflZpXnJJZn5eQrF-TmJRQrJqTk5PAysaYk5xam8UJqbQcnNNcTZQze1ID8-tbggMTk1L7Uk3tnPyMDUwsLQ0tAyNNSYKEUAcsoxEQ</recordid><startdate>20170111</startdate><enddate>20170111</enddate><creator>YU FENGJUN</creator><creator>MENG DAN</creator><creator>HU DAN</creator><creator>TANG ZHENJIE</creator><creator>NIU XIAOPING</creator><creator>ZHANG XIWEI</creator><creator>JIA SHUANWEN</creator><scope>EVB</scope></search><sort><creationdate>20170111</creationdate><title>Big open circuit voltage nanometer heterojunction solar cell</title><author>YU FENGJUN ; MENG DAN ; HU DAN ; TANG ZHENJIE ; NIU XIAOPING ; ZHANG XIWEI ; JIA SHUANWEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN205881919UU3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><topic>TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</topic><toplevel>online_resources</toplevel><creatorcontrib>YU FENGJUN</creatorcontrib><creatorcontrib>MENG DAN</creatorcontrib><creatorcontrib>HU DAN</creatorcontrib><creatorcontrib>TANG ZHENJIE</creatorcontrib><creatorcontrib>NIU XIAOPING</creatorcontrib><creatorcontrib>ZHANG XIWEI</creatorcontrib><creatorcontrib>JIA SHUANWEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YU FENGJUN</au><au>MENG DAN</au><au>HU DAN</au><au>TANG ZHENJIE</au><au>NIU XIAOPING</au><au>ZHANG XIWEI</au><au>JIA SHUANWEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Big open circuit voltage nanometer heterojunction solar cell</title><date>2017-01-11</date><risdate>2017</risdate><abstract>The utility model discloses a big open circuit voltage nanometer heterojunction solar cell. Does it include substrate layer, p type semiconductor nano wire, golden electrode, passivation layer, n type semiconductor films, titanium electrode. Be equipped with p on the substrate layer type semiconductor nano wire, P be equipped with golden electrode on the one end of type semiconductor nano wire, P be equipped with the passivation layer on the other end of type semiconductor nano wire, be equipped with n on the passivation layer type semiconductor films, N be equipped with titanium electrode on the type semiconductor films. The utility model discloses a nanometer heterostructure, selection, configuration optimization through the material have realized that open circuit voltage reaches the big open circuit voltage solar cell more than the 1V.
本实用新型公开了种大开路电压纳米异质结太阳能电池。其包括衬底层、p-型半导体纳米线、金电极、钝化层、n-型半导体薄膜、钛电极。所述衬底层之上设有p-型半导体纳米线,所述p-型半导体纳米线的端之上设有金电极,所述p-型半导体纳米线的另端之上设有钝化层,所述钝化层之上设有n-型半导体薄膜,所述n-型半导体薄膜之上设有钛电极。本实用新型采用纳米异质</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE |
title | Big open circuit voltage nanometer heterojunction solar cell |
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