Diode power module

Diode power module

Diode power module, it mainly includes: semiconductor chip, metallization ceramic base, the aluminium strip, radiating basal plate and shell, the diode chip pass through the solder weld the metallization ceramic base the positive pole on, to pass through the positive pole of aluminium strip and diod...

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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description Diode power module, it mainly includes: semiconductor chip, metallization ceramic base, the aluminium strip, radiating basal plate and shell, the diode chip pass through the solder weld the metallization ceramic base the positive pole on, to pass through the positive pole of aluminium strip and diode chip continuous for ceramic base's positive pole copper layer to use the ultrasonic wave bonded to metallize, on radiating basal plate is welded through the solder in metallization ceramic base's back copper layer, metallization ceramic base make through metallization ceramic technology by first copper surface, middle ceramic layer and second copper surface, the soft attitude aluminium strip of aluminium strip for making with continuous casting -rolling technology, radiating basal plate adheres with the shell through sealed glue, soft attitude aluminium strip use the surface of ultrasonic wave bonding method welding at semiconductor chip, it has simple structure, encapsulates of high qualityly, can ensure and encapsulation and technology and requirement improve characteristics such as reliability and overcurrent ability greatly.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN204792767UU</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN204792767UU</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN204792767UU3</originalsourceid><addsrcrecordid>eNrjZBByycxPSVUoyC9PLVLIzU8pzUnlYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxzn5GBibmlkbmZuahocZEKQIAMSMgvQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Diode power module</title><source>esp@cenet</source><creator>JI LINXIA</creator><creatorcontrib>JI LINXIA</creatorcontrib><description>Diode power module, it mainly includes: semiconductor chip, metallization ceramic base, the aluminium strip, radiating basal plate and shell, the diode chip pass through the solder weld the metallization ceramic base the positive pole on, to pass through the positive pole of aluminium strip and diode chip continuous for ceramic base's positive pole copper layer to use the ultrasonic wave bonded to metallize, on radiating basal plate is welded through the solder in metallization ceramic base's back copper layer, metallization ceramic base make through metallization ceramic technology by first copper surface, middle ceramic layer and second copper surface, the soft attitude aluminium strip of aluminium strip for making with continuous casting -rolling technology, radiating basal plate adheres with the shell through sealed glue, soft attitude aluminium strip use the surface of ultrasonic wave bonding method welding at semiconductor chip, it has simple structure, encapsulates of high qualityly, can ensure and encapsulation and technology and requirement improve characteristics such as reliability and overcurrent ability greatly.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20151118&amp;DB=EPODOC&amp;CC=CN&amp;NR=204792767U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20151118&amp;DB=EPODOC&amp;CC=CN&amp;NR=204792767U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JI LINXIA</creatorcontrib><title>Diode power module</title><description>Diode power module, it mainly includes: semiconductor chip, metallization ceramic base, the aluminium strip, radiating basal plate and shell, the diode chip pass through the solder weld the metallization ceramic base the positive pole on, to pass through the positive pole of aluminium strip and diode chip continuous for ceramic base's positive pole copper layer to use the ultrasonic wave bonded to metallize, on radiating basal plate is welded through the solder in metallization ceramic base's back copper layer, metallization ceramic base make through metallization ceramic technology by first copper surface, middle ceramic layer and second copper surface, the soft attitude aluminium strip of aluminium strip for making with continuous casting -rolling technology, radiating basal plate adheres with the shell through sealed glue, soft attitude aluminium strip use the surface of ultrasonic wave bonding method welding at semiconductor chip, it has simple structure, encapsulates of high qualityly, can ensure and encapsulation and technology and requirement improve characteristics such as reliability and overcurrent ability greatly.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBByycxPSVUoyC9PLVLIzU8pzUnlYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxzn5GBibmlkbmZuahocZEKQIAMSMgvQ</recordid><startdate>20151118</startdate><enddate>20151118</enddate><creator>JI LINXIA</creator><scope>EVB</scope></search><sort><creationdate>20151118</creationdate><title>Diode power module</title><author>JI LINXIA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN204792767UU3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>JI LINXIA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JI LINXIA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Diode power module</title><date>2015-11-18</date><risdate>2015</risdate><abstract>Diode power module, it mainly includes: semiconductor chip, metallization ceramic base, the aluminium strip, radiating basal plate and shell, the diode chip pass through the solder weld the metallization ceramic base the positive pole on, to pass through the positive pole of aluminium strip and diode chip continuous for ceramic base's positive pole copper layer to use the ultrasonic wave bonded to metallize, on radiating basal plate is welded through the solder in metallization ceramic base's back copper layer, metallization ceramic base make through metallization ceramic technology by first copper surface, middle ceramic layer and second copper surface, the soft attitude aluminium strip of aluminium strip for making with continuous casting -rolling technology, radiating basal plate adheres with the shell through sealed glue, soft attitude aluminium strip use the surface of ultrasonic wave bonding method welding at semiconductor chip, it has simple structure, encapsulates of high qualityly, can ensure and encapsulation and technology and requirement improve characteristics such as reliability and overcurrent ability greatly.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Diode power module
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-14T17%3A00%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JI%20LINXIA&rft.date=2015-11-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN204792767UU%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true