Low dislocation density and residual stress's LED epitaxial structure

Low dislocation density and residual stress's LED epitaxial structure relates to the luminous field of semiconductor. The utility model discloses follow supreme sapphire substrate, alN buffer layer, u type gaN layer, N type gaN layer, active layer, electron barrier layer and the P type gaN layer of including in proper order down. Structurally, the supreme three -dimensional grown layer of u -GaN, u -GaN two dimension block grown layer and the u -GaN two dimension doping superlattice growth layer of including is in proper order down followed on u type gaN layer. U -GaN two dimension doping superlattice growth layer includes that the doping element in the alternating temperature vary voltage doping gaN layer is si from the gaN layer of not adulterateing of supreme alternating temperature vary voltage doping gaN layer of growing in turn and alternating temperature vary voltage down. Compared with the prior art, the utility model discloses a change of structure effectively reduces dislocation density and residual stress, improves the photoelectric characteristic of device.