Chain-type fluff making device of polycrystalline silicon chips
The utility model discloses a chain-type fluff making device of polycrystalline silicon chips. The chain-type fluff making device comprises an etching tank body. The etching tank body is connected with at least a first roller and a plurality of second rollers. The plurality of second rollers located...
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| creator | TIE SHENGNIAN GAO MENGYU WANG JUN ZHOU LIAN HOU SIYI FANG YUSHUANG |
| description | The utility model discloses a chain-type fluff making device of polycrystalline silicon chips. The chain-type fluff making device comprises an etching tank body. The etching tank body is connected with at least a first roller and a plurality of second rollers. The plurality of second rollers located under the polycrystalline silicon chips are used for transmitting the polycrystalline silicon chips. The first roller is located on a fluff making surface of the polycrystalline silicon chip. The first roller comprises a roller main body and microstructures uniformly distributed at the periphery of the roller main body in a protruding manner. When the polycrystalline silicon chip is transmitted in the etching tank body, the microstructures are pressed and printed on the fluff making surface of the polycrystalline silicon chip. In the fluff making device, through improvement of the rollers, a reaction solution on the surface of the polycrystalline silicon chip can flow, gases generated during the reaction process can be discharged in time, the microstructures on the first roller can be transferred to the surface of the polycrystalline silicon chip reversely during the fluff making process, and therefore uniform fluff surface effects are obtained. |
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The chain-type fluff making device comprises an etching tank body. The etching tank body is connected with at least a first roller and a plurality of second rollers. The plurality of second rollers located under the polycrystalline silicon chips are used for transmitting the polycrystalline silicon chips. The first roller is located on a fluff making surface of the polycrystalline silicon chip. The first roller comprises a roller main body and microstructures uniformly distributed at the periphery of the roller main body in a protruding manner. When the polycrystalline silicon chip is transmitted in the etching tank body, the microstructures are pressed and printed on the fluff making surface of the polycrystalline silicon chip. In the fluff making device, through improvement of the rollers, a reaction solution on the surface of the polycrystalline silicon chip can flow, gases generated during the reaction process can be discharged in time, the microstructures on the first roller can be transferred to the surface of the polycrystalline silicon chip reversely during the fluff making process, and therefore uniform fluff surface effects are obtained.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150701&DB=EPODOC&CC=CN&NR=204441311U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150701&DB=EPODOC&CC=CN&NR=204441311U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TIE SHENGNIAN</creatorcontrib><creatorcontrib>GAO MENGYU</creatorcontrib><creatorcontrib>WANG JUN</creatorcontrib><creatorcontrib>ZHOU LIAN</creatorcontrib><creatorcontrib>HOU SIYI</creatorcontrib><creatorcontrib>FANG YUSHUANG</creatorcontrib><title>Chain-type fluff making device of polycrystalline silicon chips</title><description>The utility model discloses a chain-type fluff making device of polycrystalline silicon chips. The chain-type fluff making device comprises an etching tank body. The etching tank body is connected with at least a first roller and a plurality of second rollers. The plurality of second rollers located under the polycrystalline silicon chips are used for transmitting the polycrystalline silicon chips. The first roller is located on a fluff making surface of the polycrystalline silicon chip. The first roller comprises a roller main body and microstructures uniformly distributed at the periphery of the roller main body in a protruding manner. When the polycrystalline silicon chip is transmitted in the etching tank body, the microstructures are pressed and printed on the fluff making surface of the polycrystalline silicon chip. In the fluff making device, through improvement of the rollers, a reaction solution on the surface of the polycrystalline silicon chip can flow, gases generated during the reaction process can be discharged in time, the microstructures on the first roller can be transferred to the surface of the polycrystalline silicon chip reversely during the fluff making process, and therefore uniform fluff surface effects are obtained.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><subject>TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQANAsDqL-w-FeMDa7Q7A4Odm5HPFiD89LaKKQv3fxA5ze8tbm5Gdk7WrLBFHeMcILn6wPuNOHA0GKkJO0sLRSUYSVoLBwSAph5ly2ZhVRCu1-bsx-ON_8paOcJioZAynVyV-PB-ec7a0dx_6v9AUE_zHZ</recordid><startdate>20150701</startdate><enddate>20150701</enddate><creator>TIE SHENGNIAN</creator><creator>GAO MENGYU</creator><creator>WANG JUN</creator><creator>ZHOU LIAN</creator><creator>HOU SIYI</creator><creator>FANG YUSHUANG</creator><scope>EVB</scope></search><sort><creationdate>20150701</creationdate><title>Chain-type fluff making device of polycrystalline silicon chips</title><author>TIE SHENGNIAN ; GAO MENGYU ; WANG JUN ; ZHOU LIAN ; HOU SIYI ; FANG YUSHUANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN204441311UU3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><topic>TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>TIE SHENGNIAN</creatorcontrib><creatorcontrib>GAO MENGYU</creatorcontrib><creatorcontrib>WANG JUN</creatorcontrib><creatorcontrib>ZHOU LIAN</creatorcontrib><creatorcontrib>HOU SIYI</creatorcontrib><creatorcontrib>FANG YUSHUANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TIE SHENGNIAN</au><au>GAO MENGYU</au><au>WANG JUN</au><au>ZHOU LIAN</au><au>HOU SIYI</au><au>FANG YUSHUANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Chain-type fluff making device of polycrystalline silicon chips</title><date>2015-07-01</date><risdate>2015</risdate><abstract>The utility model discloses a chain-type fluff making device of polycrystalline silicon chips. The chain-type fluff making device comprises an etching tank body. The etching tank body is connected with at least a first roller and a plurality of second rollers. The plurality of second rollers located under the polycrystalline silicon chips are used for transmitting the polycrystalline silicon chips. The first roller is located on a fluff making surface of the polycrystalline silicon chip. The first roller comprises a roller main body and microstructures uniformly distributed at the periphery of the roller main body in a protruding manner. When the polycrystalline silicon chip is transmitted in the etching tank body, the microstructures are pressed and printed on the fluff making surface of the polycrystalline silicon chip. In the fluff making device, through improvement of the rollers, a reaction solution on the surface of the polycrystalline silicon chip can flow, gases generated during the reaction process can be discharged in time, the microstructures on the first roller can be transferred to the surface of the polycrystalline silicon chip reversely during the fluff making process, and therefore uniform fluff surface effects are obtained.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Chain-type fluff making device of polycrystalline silicon chips |
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