N type silicon substrate back contact solar battery
The utility model relates to an N type silicon substrate back contact solar battery. An N type silicon substrate illuminated face is provided with a laminated structure of more than one antireflection layer; an N type silicon substrate shady face is an N type layer part and a P type layer part alter...
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creator | JIANG YANSEN FANG LIANG LIU XINGCUN ZHANG CHUNYAN JIA HESHUN MA JILEI REN XIANKUN |
description | The utility model relates to an N type silicon substrate back contact solar battery. An N type silicon substrate illuminated face is provided with a laminated structure of more than one antireflection layer; an N type silicon substrate shady face is an N type layer part and a P type layer part alternatively arranged, wherein the N type layer part successively comprises an N type silicon substrate, an antireflection layer, and an electrode penetrating the antireflection layer and contacting with the N type silicon substrate, and the P type layer part successively comprises the N type silicon substrate, a P type crystalline silicon layer, an antireflection layer, and an electrode penetrating the antireflection layer and connecting with the P type crystalline silicon layer. The N type silicon substrate back side contact solar battery is compatible with a traditional crystalline silicon production line, and can realize production of back contact solar batteries through upgrading and reconstruction; compared with a traditional crystalline silicon solar battery, the N type silicon substrate back side contact solar battery can solve the problem of front side electrode shading of a general solar battery, reduce usage amount of metal electrodes and raise efficiency of a solar battery; compared with a traditional HIT battery and an IBC solar battery, the N type silicon substrate back side contact solar battery has the characteristics of simple preparation processes and low equipment cost. |
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An N type silicon substrate illuminated face is provided with a laminated structure of more than one antireflection layer; an N type silicon substrate shady face is an N type layer part and a P type layer part alternatively arranged, wherein the N type layer part successively comprises an N type silicon substrate, an antireflection layer, and an electrode penetrating the antireflection layer and contacting with the N type silicon substrate, and the P type layer part successively comprises the N type silicon substrate, a P type crystalline silicon layer, an antireflection layer, and an electrode penetrating the antireflection layer and connecting with the P type crystalline silicon layer. The N type silicon substrate back side contact solar battery is compatible with a traditional crystalline silicon production line, and can realize production of back contact solar batteries through upgrading and reconstruction; compared with a traditional crystalline silicon solar battery, the N type silicon substrate back side contact solar battery can solve the problem of front side electrode shading of a general solar battery, reduce usage amount of metal electrodes and raise efficiency of a solar battery; compared with a traditional HIT battery and an IBC solar battery, the N type silicon substrate back side contact solar battery has the characteristics of simple preparation processes and low equipment cost.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20141029&DB=EPODOC&CC=CN&NR=203910814U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20141029&DB=EPODOC&CC=CN&NR=203910814U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JIANG YANSEN</creatorcontrib><creatorcontrib>FANG LIANG</creatorcontrib><creatorcontrib>LIU XINGCUN</creatorcontrib><creatorcontrib>ZHANG CHUNYAN</creatorcontrib><creatorcontrib>JIA HESHUN</creatorcontrib><creatorcontrib>MA JILEI</creatorcontrib><creatorcontrib>REN XIANKUN</creatorcontrib><title>N type silicon substrate back contact solar battery</title><description>The utility model relates to an N type silicon substrate back contact solar battery. 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An N type silicon substrate illuminated face is provided with a laminated structure of more than one antireflection layer; an N type silicon substrate shady face is an N type layer part and a P type layer part alternatively arranged, wherein the N type layer part successively comprises an N type silicon substrate, an antireflection layer, and an electrode penetrating the antireflection layer and contacting with the N type silicon substrate, and the P type layer part successively comprises the N type silicon substrate, a P type crystalline silicon layer, an antireflection layer, and an electrode penetrating the antireflection layer and connecting with the P type crystalline silicon layer. The N type silicon substrate back side contact solar battery is compatible with a traditional crystalline silicon production line, and can realize production of back contact solar batteries through upgrading and reconstruction; compared with a traditional crystalline silicon solar battery, the N type silicon substrate back side contact solar battery can solve the problem of front side electrode shading of a general solar battery, reduce usage amount of metal electrodes and raise efficiency of a solar battery; compared with a traditional HIT battery and an IBC solar battery, the N type silicon substrate back side contact solar battery has the characteristics of simple preparation processes and low equipment cost.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | N type silicon substrate back contact solar battery |
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