Epitaxial wafer base disc
The utility model discloses an epitaxial wafer base disc which comprises a disc body, a central containing groove and containing grooves. The epitaxial wafer base disc is characterized in that the central containing groove is formed in the center of the disc body; the containing grooves are uniforml...
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| creator | CHEN HAOZHONG LIN XIHAN DENG SHUNDA |
| description | The utility model discloses an epitaxial wafer base disc which comprises a disc body, a central containing groove and containing grooves. The epitaxial wafer base disc is characterized in that the central containing groove is formed in the center of the disc body; the containing grooves are uniformly formed in the periphery of the central containing groove; epitaxial wafers are arranged in the central containing groove and the containing grooves; the central containing groove and the containing grooves are in round shapes with equal diameters. The epitaxial wafer base disc has the beneficial effects that 37 epitaxial wafers can grow on the epitaxial wafer base disc in one time, the production efficiency is high, the production cost is low, the uniformity of the epitaxial wafers is relatively good, and the quality of the epitaxial wafers is stable. |
| format | Patent |
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The epitaxial wafer base disc is characterized in that the central containing groove is formed in the center of the disc body; the containing grooves are uniformly formed in the periphery of the central containing groove; epitaxial wafers are arranged in the central containing groove and the containing grooves; the central containing groove and the containing grooves are in round shapes with equal diameters. The epitaxial wafer base disc has the beneficial effects that 37 epitaxial wafers can grow on the epitaxial wafer base disc in one time, the production efficiency is high, the production cost is low, the uniformity of the epitaxial wafers is relatively good, and the quality of the epitaxial wafers is stable.</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140312&DB=EPODOC&CC=CN&NR=203474959U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140312&DB=EPODOC&CC=CN&NR=203474959U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHEN HAOZHONG</creatorcontrib><creatorcontrib>LIN XIHAN</creatorcontrib><creatorcontrib>DENG SHUNDA</creatorcontrib><title>Epitaxial wafer base disc</title><description>The utility model discloses an epitaxial wafer base disc which comprises a disc body, a central containing groove and containing grooves. 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The epitaxial wafer base disc is characterized in that the central containing groove is formed in the center of the disc body; the containing grooves are uniformly formed in the periphery of the central containing groove; epitaxial wafers are arranged in the central containing groove and the containing grooves; the central containing groove and the containing grooves are in round shapes with equal diameters. The epitaxial wafer base disc has the beneficial effects that 37 epitaxial wafers can grow on the epitaxial wafer base disc in one time, the production efficiency is high, the production cost is low, the uniformity of the epitaxial wafers is relatively good, and the quality of the epitaxial wafers is stable.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Epitaxial wafer base disc |
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