Ultrasonic wave auxiliary water-bath vacuum physical vapor deposition (PVD) thick film system device
The utility model provides an ultrasonic wave auxiliary water-bath vacuum physical vapor deposition (PVD) thick film system device which mainly comprises a thin film transistor (TFT) substrate, a substrate temperature control instrument, a vacuum air pump, a circulating cooling water pipe, a film ra...
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| creator | LIU GONGLONG LV YANFANG YANG WEIGUANG YUAN ANDONG SHI WEIMIN LIAO YANG QU XIAOLEI |
| description | The utility model provides an ultrasonic wave auxiliary water-bath vacuum physical vapor deposition (PVD) thick film system device which mainly comprises a thin film transistor (TFT) substrate, a substrate temperature control instrument, a vacuum air pump, a circulating cooling water pipe, a film raw material evaporation tube, a water-bath heating tank and an ultrasonic wave generator. The TFT substrate is provided with a vacuum cavity and is used for depositing thick films. The ultrasonic wave auxiliary water-bath vacuum PVD thick film system device is simple in structure and easy to operate, can be reused and is particularly suitable for preparing detector-level mercury iodide films with large areas. The utility model belongs to the vacuum evaporation thick film growing field, relates to the growing of thick films made of materials with a melting point or sublimation temperature below 200 DEG C, in particularly to a growing system for mercury iodide thick films of an X-ray and Y-ray detector, and belongs to |
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The TFT substrate is provided with a vacuum cavity and is used for depositing thick films. The ultrasonic wave auxiliary water-bath vacuum PVD thick film system device is simple in structure and easy to operate, can be reused and is particularly suitable for preparing detector-level mercury iodide films with large areas. The utility model belongs to the vacuum evaporation thick film growing field, relates to the growing of thick films made of materials with a melting point or sublimation temperature below 200 DEG C, in particularly to a growing system for mercury iodide thick films of an X-ray and Y-ray detector, and belongs to</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121219&DB=EPODOC&CC=CN&NR=202610310U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121219&DB=EPODOC&CC=CN&NR=202610310U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIU GONGLONG</creatorcontrib><creatorcontrib>LV YANFANG</creatorcontrib><creatorcontrib>YANG WEIGUANG</creatorcontrib><creatorcontrib>YUAN ANDONG</creatorcontrib><creatorcontrib>SHI WEIMIN</creatorcontrib><creatorcontrib>LIAO YANG</creatorcontrib><creatorcontrib>QU XIAOLEI</creatorcontrib><title>Ultrasonic wave auxiliary water-bath vacuum physical vapor deposition (PVD) thick film system device</title><description>The utility model provides an ultrasonic wave auxiliary water-bath vacuum physical vapor deposition (PVD) thick film system device which mainly comprises a thin film transistor (TFT) substrate, a substrate temperature control instrument, a vacuum air pump, a circulating cooling water pipe, a film raw material evaporation tube, a water-bath heating tank and an ultrasonic wave generator. The TFT substrate is provided with a vacuum cavity and is used for depositing thick films. The ultrasonic wave auxiliary water-bath vacuum PVD thick film system device is simple in structure and easy to operate, can be reused and is particularly suitable for preparing detector-level mercury iodide films with large areas. The utility model belongs to the vacuum evaporation thick film growing field, relates to the growing of thick films made of materials with a melting point or sublimation temperature below 200 DEG C, in particularly to a growing system for mercury iodide thick films of an X-ray and Y-ray detector, and belongs to</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjDsKwkAQQNNYiHqHwUqLQD7gBaJiJRbGNoybCTu4yS67k2hu7xYewOrx4PGWSVsb8RjswAreOBHg-GHD6OeoQj59omiYUI1jD07PgRWa6M56aMnZwMJ2gN3tcdyDaFYv6Nj0EOYg1MdkYkXrZNGhCbT5cZVsz6d7dUnjoKHgUNFA0lTXIisOeVbmWV2Xf0Vfe88_eg</recordid><startdate>20121219</startdate><enddate>20121219</enddate><creator>LIU GONGLONG</creator><creator>LV YANFANG</creator><creator>YANG WEIGUANG</creator><creator>YUAN ANDONG</creator><creator>SHI WEIMIN</creator><creator>LIAO YANG</creator><creator>QU XIAOLEI</creator><scope>EVB</scope></search><sort><creationdate>20121219</creationdate><title>Ultrasonic wave auxiliary water-bath vacuum physical vapor deposition (PVD) thick film system device</title><author>LIU GONGLONG ; LV YANFANG ; YANG WEIGUANG ; YUAN ANDONG ; SHI WEIMIN ; LIAO YANG ; QU XIAOLEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN202610310UU3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2012</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>LIU GONGLONG</creatorcontrib><creatorcontrib>LV YANFANG</creatorcontrib><creatorcontrib>YANG WEIGUANG</creatorcontrib><creatorcontrib>YUAN ANDONG</creatorcontrib><creatorcontrib>SHI WEIMIN</creatorcontrib><creatorcontrib>LIAO YANG</creatorcontrib><creatorcontrib>QU XIAOLEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIU GONGLONG</au><au>LV YANFANG</au><au>YANG WEIGUANG</au><au>YUAN ANDONG</au><au>SHI WEIMIN</au><au>LIAO YANG</au><au>QU XIAOLEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Ultrasonic wave auxiliary water-bath vacuum physical vapor deposition (PVD) thick film system device</title><date>2012-12-19</date><risdate>2012</risdate><abstract>The utility model provides an ultrasonic wave auxiliary water-bath vacuum physical vapor deposition (PVD) thick film system device which mainly comprises a thin film transistor (TFT) substrate, a substrate temperature control instrument, a vacuum air pump, a circulating cooling water pipe, a film raw material evaporation tube, a water-bath heating tank and an ultrasonic wave generator. The TFT substrate is provided with a vacuum cavity and is used for depositing thick films. The ultrasonic wave auxiliary water-bath vacuum PVD thick film system device is simple in structure and easy to operate, can be reused and is particularly suitable for preparing detector-level mercury iodide films with large areas. The utility model belongs to the vacuum evaporation thick film growing field, relates to the growing of thick films made of materials with a melting point or sublimation temperature below 200 DEG C, in particularly to a growing system for mercury iodide thick films of an X-ray and Y-ray detector, and belongs to</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Ultrasonic wave auxiliary water-bath vacuum physical vapor deposition (PVD) thick film system device |
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