Dynamic aging device for 3DK28G and 3CK2E type transistors
The utility model discloses a dynamic aging device for 3DK28G and 3CK2E type transistors, comprising a power circuit, a pulse generating and driving circuit and a plurality of sets of aging plates, wherein each set of the aging plate consists of two aging plates, the power circuit provides a require...
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| creator | LEI QIAOYUN |
| description | The utility model discloses a dynamic aging device for 3DK28G and 3CK2E type transistors, comprising a power circuit, a pulse generating and driving circuit and a plurality of sets of aging plates, wherein each set of the aging plate consists of two aging plates, the power circuit provides a required power signal to the whole device, and the pulse generating and driving circuit is connected with the aging plates by single-pole double-throw switches; and the pulse generating and driving circuit comprises a singlechip, a crystal oscillator, an and not gate and an audion, wherein the crystal oscillator is connected with the singlechip in parallel, the and not gate is connected with the singlechip, and the and not gate is connected with a base electrode of the audion. According to the dynamic aging device for the 3DK28G and 3CK2E type transistors in the utility model, the dynamic aging problem of the 3DK28G and 3CK2E type transistors taken as electric switches in an application circuit can be effectively solved. |
| format | Patent |
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According to the dynamic aging device for the 3DK28G and 3CK2E type transistors in the utility model, the dynamic aging problem of the 3DK28G and 3CK2E type transistors taken as electric switches in an application circuit can be effectively solved.</description><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLByqcxLzM1MVkhMz8xLV0hJLctMTlVIyy9SMHbxNrJwV0jMS1EwdvY2clUoqSxIVSgpSswrziwuyS8q5mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8c5-RgZGJkaGJsYmoaHGRCkCAOb0Lc8</recordid><startdate>20120905</startdate><enddate>20120905</enddate><creator>LEI QIAOYUN</creator><scope>EVB</scope></search><sort><creationdate>20120905</creationdate><title>Dynamic aging device for 3DK28G and 3CK2E type transistors</title><author>LEI QIAOYUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN202421434UU3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2012</creationdate><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>LEI QIAOYUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEI QIAOYUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Dynamic aging device for 3DK28G and 3CK2E type transistors</title><date>2012-09-05</date><risdate>2012</risdate><abstract>The utility model discloses a dynamic aging device for 3DK28G and 3CK2E type transistors, comprising a power circuit, a pulse generating and driving circuit and a plurality of sets of aging plates, wherein each set of the aging plate consists of two aging plates, the power circuit provides a required power signal to the whole device, and the pulse generating and driving circuit is connected with the aging plates by single-pole double-throw switches; and the pulse generating and driving circuit comprises a singlechip, a crystal oscillator, an and not gate and an audion, wherein the crystal oscillator is connected with the singlechip in parallel, the and not gate is connected with the singlechip, and the and not gate is connected with a base electrode of the audion. According to the dynamic aging device for the 3DK28G and 3CK2E type transistors in the utility model, the dynamic aging problem of the 3DK28G and 3CK2E type transistors taken as electric switches in an application circuit can be effectively solved.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING |
| title | Dynamic aging device for 3DK28G and 3CK2E type transistors |
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