Methods for stable and repeatable plasma ion implantation
A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system having a process chamber (10), a source for producing a plasma (40) in the process chamber, a platen (14) for holding a substrate (20) in the process chamber, an anode (24) spaced from the platen,...
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| creator | WALTHER STEVEN R.,FANG ZIWEI,TOCCO JUSTIN,ELLIS CARLETON F. III |
| description | A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system having a process chamber (10), a source for producing a plasma (40) in the process chamber, a platen (14) for holding a substrate (20) in the process chamber, an anode (24) spaced from the platen, and a pulse source (30) for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, a parameter of an implant process is varied to at least partially compensate for undesired effects of interaction between ions being implanted and the substrate. For example, dose rate, ion energy, or both may be varied during the implant process. In another aspect, a pretreatment step includes accelerating ions from the plasma to the anode to cause emission of secondary electrons from the anode, and accelerating the secondary electrons from the anode to a substrate for pretreatment of the substrate. |
| format | Patent |
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III</creatorcontrib><description>A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system having a process chamber (10), a source for producing a plasma (40) in the process chamber, a platen (14) for holding a substrate (20) in the process chamber, an anode (24) spaced from the platen, and a pulse source (30) for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, a parameter of an implant process is varied to at least partially compensate for undesired effects of interaction between ions being implanted and the substrate. For example, dose rate, ion energy, or both may be varied during the implant process. 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In one aspect, a parameter of an implant process is varied to at least partially compensate for undesired effects of interaction between ions being implanted and the substrate. For example, dose rate, ion energy, or both may be varied during the implant process. In another aspect, a pretreatment step includes accelerating ions from the plasma to the anode to cause emission of secondary electrons from the anode, and accelerating the secondary electrons from the anode to a substrate for pretreatment of the substrate.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Methods for stable and repeatable plasma ion implantation |
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