Phase change memory cell and manufacturing method
The invention relates to a phase change memory cell as part of the phase change memory device. The phase change memory cell includes first and second electrodes electrically coupled by a phase change element. At least a section of the phase change element comprises a higher reset transition temperat...
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| creator | HSIANG-LAN,LIU LUNG |
| description | The invention relates to a phase change memory cell as part of the phase change memory device. The phase change memory cell includes first and second electrodes electrically coupled by a phase change element. At least a section of the phase change element comprises a higher reset transition temperature portion and a lower reset transition temperature portion. The lower reset transition temperature portion comprises a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher reset transition temperature portion. |
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At least a section of the phase change element comprises a higher reset transition temperature portion and a lower reset transition temperature portion. The lower reset transition temperature portion comprises a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher reset transition temperature portion.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070711&DB=EPODOC&CC=CN&NR=1996635A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070711&DB=EPODOC&CC=CN&NR=1996635A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HSIANG-LAN,LIU LUNG</creatorcontrib><title>Phase change memory cell and manufacturing method</title><description>The invention relates to a phase change memory cell as part of the phase change memory device. 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The lower reset transition temperature portion comprises a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher reset transition temperature portion.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAMyEgsTlVIzkjMS09VyE3NzS-qVEhOzclRSMxLUchNzCtNS0wuKS3KzEsHypZk5KfwMLCmJeYUp_JCaW4GeTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DS0szM2NTR2PCKgDcdCra</recordid><startdate>20070711</startdate><enddate>20070711</enddate><creator>HSIANG-LAN,LIU LUNG</creator><scope>EVB</scope></search><sort><creationdate>20070711</creationdate><title>Phase change memory cell and manufacturing method</title><author>HSIANG-LAN,LIU LUNG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1996635A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>HSIANG-LAN,LIU LUNG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HSIANG-LAN,LIU LUNG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Phase change memory cell and manufacturing method</title><date>2007-07-11</date><risdate>2007</risdate><abstract>The invention relates to a phase change memory cell as part of the phase change memory device. The phase change memory cell includes first and second electrodes electrically coupled by a phase change element. At least a section of the phase change element comprises a higher reset transition temperature portion and a lower reset transition temperature portion. The lower reset transition temperature portion comprises a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher reset transition temperature portion.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| title | Phase change memory cell and manufacturing method |
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