Semiconductor device and method of manufacturing the same

A semiconductor device and a manufacturing method thereof for preventing gate electrode degradation and gate current leakage. The semiconductor device includes a gate insulating layer including an H-k (high dielectric) material on a semiconductor substrate, a barrier metal layer including a metal al...

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Bibliographische Detailangaben
1. Verfasser: BAIK HION-SUCK,LEE EUN-HA,JUNG HYUNG-SUK,HAN SUNG-KEE,YANG MIN-HO
Format: Patent
Sprache:eng
Schlagworte:
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